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Ultrafast All-optical Switches Based on Intersubband Transitions in GaN/AlN Multiple Quantum Wells for Tb/s Operation

Published online by Cambridge University Press:  01 February 2011

Jahan M. Dawlaty ,
Farhan Rana  and
William J. Schaff
Jahan M. Dawlaty
Affiliation:
Department of Electrical and Computer Engineering, Philips Hall, Cornell University, Ithaca, NY 14853, U.S.A
Farhan Rana
Affiliation:
Department of Electrical and Computer Engineering, Philips Hall, Cornell University, Ithaca, NY 14853, U.S.A
William J. Schaff
Affiliation:
Department of Electrical and Computer Engineering, Philips Hall, Cornell University, Ithaca, NY 14853, U.S.A
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Abstract

Theoretical and experimental results on ultra-fast all-optical switches based on intersubband transitions for Tb/s operation are presented. Designs for engineering intersubband transitions (ISBT) in GaN/AlN quantum wells near communication wavelengths (∼1.55 μm) and for realizing all-optical switches requiring small pulse energies are discussed. Optimized designs show all-optical switching at Tb/s data rates with pulse energies as small as 200 fJ. Experimental realization of narrow line-width ISBT in GaN/AlN superlattices is also demonstrated.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E7.3
Copyright
Copyright © Materials Research Society 2005

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References

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