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Transient Enhanced Diffusion in B+ and P+ Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

S. J. Pennycook  and
R. J. Culbertson
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
R. J. Culbertson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

We report the transient enhanced diffusion of supersaturated phosphorus in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or redissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follows their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactivation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

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Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 379
Copyright
Copyright © Materials Research Society 1987

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References

1. Hofker, W. K., Werner, H. W., Oosthoek, D. P., and de Grefte, H. A. M., Appl. Phys. 2, 265 (1973)Google Scholar
2. Narayan, J., Holland, O. W., Eby, R. E., Wortman, J. J., Ozguz, V., and Rozgonyi, G. A., Appl. Phys. Lett. 43, 957 (1983).Google Scholar
3. Cho, K., Numan, M., Finstad, T. G., Chu, W. K., Liu, J., and Wortman, J. J., Appl. Phys. Lett. 47, 1321 (1985).Google Scholar
4. Solmi, S., Guimaraes, S., Landi, E., and Negrini, P., Semiconductor Silicon 1986, Electrochemical Society, Pennington, NJ, 1986, p. 583.Google Scholar
5. Cowern, N. E. B., Yallup, K. J., Godfrey, D. J., Hasko, D. G., McMahon, R. A., Ahmed, H., Stobbs, W. M., and McPhail, D. S., Mat. Res. Soc. Symp. Proc. 52, 65 (1986).Google Scholar
6. Oehrlein, G. S., Cohen, S. A., and Sedgwick, T. O., Appl. Phys. Lett. 45, 417 (1984).Google Scholar
7. Cowern, N. E. B., Godfrey, D. J., and Sykes, D. E., in press.Google Scholar
8. Pennycook, S. J., Narayan, J., and Holland, O. W., J. Electrochem. Soc. 132, 1962 (1985).Google Scholar
9. Narayan, J., Holland, O. W., and Appleton, B. R., J. Vac. Sci. Technol. B1, 871 (1983).Google Scholar
10. Pennycook, S. J., Culbertson, R. J., and Narayan, J., J. Mater. Res. B1, 476 (1986)Google Scholar
11. Pennycook, S. J. and Culbertson, R. J., Mat. Res. Soc. Symp. Proc. 52, 37(1986).Google Scholar
12. Pennycook, S. J., Narayan, J., and Holland, O. W., J. Appl. Phys. 55, 837 (1984).Google Scholar
13. Hill, C., Nucl. Inst. Methods B, in press.Google Scholar
14. Olsen, G., Rotb, J. A., Hess, L. O., and Narayan, J., Mat. Res. Soc. Symp. Proc. 23, 375 (1984).Google Scholar
15. Servi-dori, M., Monte, C.Dal, and Zini, Q., Phys. Stat. Sol. (a) 80, 277 (1983).Google Scholar
16. Nobili, D., Armigliato, A., Finetti, M., and Solmi, S., J. Appl. Phys. 53, 1484 (1982).Google Scholar
17. Osugi, J., Namikawa, R., and Tanaka, Y., Rev. Phys. Chem. Japan 36, 35(1966).Google Scholar
18. Ashby, M. F. and Brown, L. M., Phil. Mag. 8, 1083 (1963).Google Scholar
19. Beck, C. G. and Stickler, R., J. Appl. Phys. 37, 4683 (1966).Google Scholar
20. Wadsten, T., Univ. Stockholm. Chem. Commun. No. 7, p. 1 (1973).Google Scholar
21. Servidori, M. and Armigliato, A., J. Mater. Sci. 10, 306 (1975).Google Scholar
22. Masetti, G., Nobili, D. and Solmi, S., Semiconductor Silicon, Electrochemical Society, Pennington, NJ, 1977, p. 648.Google Scholar
23. Frank, W., Radiat. Eff. 21, 119 (1974).Google Scholar
24. Gbsele, U., Semiconductor Silicon 1986, Electrochemical Society, Pennington, NJ, 1986, p. 541.Google Scholar
25. Goetzlich, J., Mat. Res. Soc. Symp. Proc. 45, 349 (1985).Google Scholar