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Time Resolved Reflectivity Measurements on Pulsed Laser Irradiated Silicon Immersed in Water

Published online by Cambridge University Press:  26 February 2011

X. D. Wu ,
D. Dijkkamp  and
T. Venkatesan
X. D. Wu
Affiliation:
Physics Department, Rutgers University, Piscataway, NJ 08854
D. Dijkkamp
Affiliation:
Philips Research Laboratories, Eindhoven, The Netherlands
T. Venkatesan
Affiliation:
Bell communications Research Inc., Red Bank, NJ 07701
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Abstract

Time resolved reflectivity (TRR) measurements were carried out during pulsed laser irradiation of silicon immersed in water. It was found that the TRR in water was similar to that in air though the signal deteriorated after about 100 ns from the starting point of the laser for incident energy densities above 1.4 J/cm2 (unlike what is observed in air). The total melt duration in water was about 2.8 to 1.6 times less than that in air at the same absorbed energy density. It was estimated that 20 % of the absorbed energy was taken away by the water layer. For the same energy coupled into the solid the melt-in/regrowth kinetics was speeded up by the presence of the water layer at the surface by about a factor 2 consistant with the results of Polman et. a15.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 561
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Pulsed Laser Processing of Semiconductors, (Semiconductors and Semimetals, Vol.23, Wood, R. F., White, C. W. and Young, R. T., eds., Academic Press, New York, 1984).Google Scholar
2. Laser Annealing of Semiconductors, edited by Poate, J. M. and Mayer, J. W. (Academic Press, New York, 1982).Google Scholar
3. Taso, J. Y., Aziz, M. J., Thompson, M. O. and Peercy, P. S., Phys. Rev. Lett., 56, 2712 (1986).Google Scholar
4. Thompson, M. O., Galvin, G. J., Mayer, J. W., Peercy, P. S., Poate, J. M., Jacobson, D. C., Cullis, A. G. and Chew, N. G., Phys. Rev. Lett. 52, 2360 (1984).CrossRefGoogle Scholar
5. Polman, A., Roorda, S., Ogale, S. B. and Saris, F. W., in Mat. Res. Soc. Proc. 74, 129(1987).CrossRefGoogle Scholar
6. Jellison, G. E. Jr, Lowndes, D. H., Mashburn, D.N. and Wood, R.F., Phys. Rev. B34, 2407 (1986).Google Scholar
7. Jellison, G. E., Jr. and Lowndes, D. H., in Mat. Res. Soc. Symp. Proc. 35,113 (1985).Google Scholar
8. Lowndes, D. H., Wood, R. F. and Narayan, J., Phys. Rev. Lett. 52, 561(1984).Google Scholar
9. Patil, P. P., Phase, D. M., Kulkarni, S. A., Ghaisas, S. V., Kulkarni, S. K., Kanetkar, S. M., Ogale, S. B. and Bhide, V. G., Phys. Rev. Lett. 58, 238 (1987).CrossRefGoogle Scholar
10. Dijkkamp, D., Wu, X. D., Chan, S. W. and Venkatesan, T., J. Appl. Phys. 62, 293(1987)CrossRefGoogle Scholar
11. Zehner, D. M., White, C.W. and Ownby, G.W., Appl. Phys. Lett. 36,56(1980).CrossRefGoogle Scholar
12. CRC Handbook of Chemistry and Physics, Weast, R. C. and Astle, M. J., eds., ( CRC Press, Florida, 1982) p. E24.Google Scholar
13. Bruines, J. J. P., van Hal, R. P. M., Boots, H. M. J., Polman, A. and Saris, F. W., Appl. Phys. Lett. 49, 1161 (1986).Google Scholar