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Thermal Stability of Ti/Pt/Au Non-Alloyed Ohmic Contacts on InN

Published online by Cambridge University Press:  25 February 2011

F. Ren ,
C. R. Abernathy ,
S. J. Pearton  and
P. W. Wisk
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, U.S.A.
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, U.S.A.
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, U.S.A.
P. W. Wisk
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, U.S.A.
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Abstract

Extremely low contact resistance of non-alloyed Ti/Pt/Au metallization on n-type InN is demonstrated. The contacts were annealed at different temperatures up to 420 °C to investigate their thermal stability. A low contact resistivity of 1.8 x 10-7 ohm-cm2 was measured at room temperature using the transmission line method. This was due to the extremely high doping level (5 x 1020 cm-3) in the InN. After 300 °C annealing, the contact resistivity increased to 2.4 x 10-7 ohm-cm2- For 360 °C annealing, the contact morphology showed some degradation, but the contact resistivity was almost the same as at 300 °C. There was serious degradation of the contacts after 420 °C annealing. The morphology became very rough, and the contact and sheet resistances increased by factors of 3-5 times. This degradation is believed due to the decomposition of the InN film. The contact resistivities between n-type epitaxial GaAs and InN were also investigated, and showed values around 10-4 ohm-cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 421
Copyright
Copyright © Materials Research Society 1995

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References

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