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Thermal Stability of Sputter Deposited Tantallum Silicide Films

Published online by Cambridge University Press:  15 February 2011

G. A. Dixit ,
R. Sundaresan ,
F. S. Chen ,
Y. S. Lin ,
C. C. Wei  and
F. T. Liou
G. A. Dixit
Affiliation:
SGS-THOMSON MICROELECTRONICSc, 1310 Electronics Drive, MS2200 Carrollton, TX 75006
R. Sundaresan
Affiliation:
SGS-THOMSON MICROELECTRONICSc, 1310 Electronics Drive, MS2200 Carrollton, TX 75006
F. S. Chen
Affiliation:
SGS-THOMSON MICROELECTRONICSc, 1310 Electronics Drive, MS2200 Carrollton, TX 75006
Y. S. Lin
Affiliation:
SGS-THOMSON MICROELECTRONICSc, 1310 Electronics Drive, MS2200 Carrollton, TX 75006
C. C. Wei
Affiliation:
SGS-THOMSON MICROELECTRONICSc, 1310 Electronics Drive, MS2200 Carrollton, TX 75006
F. T. Liou
Affiliation:
SGS-THOMSON MICROELECTRONICSc, 1310 Electronics Drive, MS2200 Carrollton, TX 75006
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Abstract

Tantallum silicide films were sputter deposited from targets with different Si/Ta stoichiometries. The films were then subjected to thermal treatments. Silicon precipitation was observed on films deposited from silicon rich targets. The effects of silicon precipitates on device characteristics was studied. A method to suppress silicon precipitation is reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 237
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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