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Thermal Stability and Semiconducting Properties of Epitaxial La0.7Sr0.3MnO3 Films

Published online by Cambridge University Press:  10 February 2011

K. S. So ,
K. H. Wong  and
W. B. Wu
K. S. So
Affiliation:
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Horn, Kowloon, Hong Kong, People's Republic of China
K. H. Wong
Affiliation:
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Horn, Kowloon, Hong Kong, People's Republic of China
W. B. Wu
Affiliation:
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Horn, Kowloon, Hong Kong, People's Republic of China
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Abstract

La0.7Src.3MnO3 (LSMO) perovskite oxide films have been grown on (001) LaAlO3 (LAO) by pulsed laser deposition. The films were deposited in an ambient oxygen pressure of 0.1 m Torr to 200 mTorr and under different substrate temperatures. Their structural properties were examined by X-ray diffractometry. Heteroepitaxial growth was confirmed for films deposited at 650°C or above. Electrical measurements suggest that the charge carrier concentraticn of the films varies with their oxygen content and shows high stability against further thermal treatment. Semiconducting LSMO films at room temperature were obtained for deposition at oxygen pressure ≤ 60 m Torr. The epitaxial LSMO films have been used as the semiconducting channel of a ferroelectric field effect transistor. Heteroepitaxial Pb(Zr0.52Ti0.48)O3/LSMO/LAO structures have been fabricated and characterized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 77
Copyright
Copyright © Materials Research Society 2000

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