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Surface Reaction Mechanisms in Selected Area Epitaxy of II-VIs

Published online by Cambridge University Press:  21 February 2011

Stuart J.C. Irvine ,
H. Hill ,
J.E. Hails ,
A.D. Pitt  and
J.B. Mullin
Stuart J.C. Irvine
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcestershire. UK
H. Hill
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcestershire. UK
J.E. Hails
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcestershire. UK
A.D. Pitt
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcestershire. UK
J.B. Mullin
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcestershire. UK
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Abstract

Laser-induced selected area epitaxy of CdTe thin films on GaAs substrates has been investigated and the role of vapour phase and surface reactions considered. Photo-enhanced growth rates of CdTe have been measured as a function of UV laser intensity and as a function of Cd to Te alkyl ratios. The growth rates are not simply determined by vapour phase photo-dissociation but also by a photolytic reaction on the surface. The latter enables good pattern definition where the growth rate is enhanced by the incident uv -radiation. The factors that determine the photo-enhancement are considered in the light of the Langmuir-Hinsheltwod model.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 357
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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