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Surface Reaction Mechanisms in Selected Area Epitaxy of II-VIs

Published online by Cambridge University Press:  21 February 2011

Stuart J.C. Irvine ,
H. Hill ,
J.E. Hails ,
A.D. Pitt  and
J.B. Mullin
Stuart J.C. Irvine
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcestershire. UK
H. Hill
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcestershire. UK
J.E. Hails
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcestershire. UK
A.D. Pitt
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcestershire. UK
J.B. Mullin
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcestershire. UK
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Abstract

Laser-induced selected area epitaxy of CdTe thin films on GaAs substrates has been investigated and the role of vapour phase and surface reactions considered. Photo-enhanced growth rates of CdTe have been measured as a function of UV laser intensity and as a function of Cd to Te alkyl ratios. The growth rates are not simply determined by vapour phase photo-dissociation but also by a photolytic reaction on the surface. The latter enables good pattern definition where the growth rate is enhanced by the incident uv -radiation. The factors that determine the photo-enhancement are considered in the light of the Langmuir-Hinsheltwod model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 357
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Irvine, S.J.C., CRC Critical Reviews in Solid State and Materials Science, 13, 279 (1987).Google Scholar
2. Donnelly, V.M., McCaulley, J.A., McCrary, V.R., Tu, C.W. and Beggy, J.C., Mat. Res. Soc. Symp. Proc. vol 129 (1989).Google Scholar
3. Irvine, S.J.C., Hill, H., Dosser, O.D., Hails, J.E., Mullin, J.B., Shenai-Khatkhate, D.V. and Cole-Hamilton, D., Materials Lett. 7, 25 (1988).Google Scholar
4. Irvine, S.J.C., Hill, H., Brown, G.T., Barnett, S.J., Hails, J.E., Dosser, O.D. and Mullin, J.B., J. Vac. Sci. Technol. (in press).Google Scholar
5. Irvine, S.J.C., Hill, H., Hails, J.E., Mullin, J.B., Barnett, S.J., Blackmore, G.W. and Dosser, O.D., J. Vac. Sci. Technol. (in press).Google Scholar
6. Zinck, J.J., Brewer, P.D., Jensen, J.E., Olson, G.L. and Tutt, L.W., Appl. Phys. Lett. 52, 1434 (1988).Google Scholar
7. Hails, J.E., Irvine, S.J.C., Mullin, J.B., Shenai-Khatkhate, D.V. and Cole-Hamilton, D., Mat. Res. Soc. Symp. Proc. Vol 131, 75 (1989).Google Scholar
8. Houle, F.A., Mat. Res. Soc. Symp. Proc. 29, 203 (1984).Google Scholar
9. Fujita, Sz., Tanabe, A., Sakamoto, T., Isemura, M. and Fujita, Sg., J. Crystal Growth 93, 750 (1988).Google Scholar
10. Bhat, I. and Ghandhi, S.K., J. Electrochem. Soc.: Solid State Science and Technology, 131, 1923 (1984).Google Scholar
11. Haq, S., PhD. Thesis, University of Birmingham, 1988.Google Scholar