Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-02-10T12:27:39.140Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Derivatization of Amorphous Silicon by Grignard Reagents

Published online by Cambridge University Press:  17 March 2011

Takashi Ehara  and
Arata Maruyama
Takashi Ehara
Affiliation:
School of Science and Engineering, Ishinomaki Senshu University, 1 Shinmito, Minamisakai, Ishinomaki, Miyagi 986-8580, Japan
Arata Maruyama
Affiliation:
School of Science and Engineering, Ishinomaki Senshu University, 1 Shinmito, Minamisakai, Ishinomaki, Miyagi 986-8580, Japan
Get access

Abstract

Substitution reactions of surface hydrogen in amorphous silicon at room temperature have been studied. After wet treatment of hydrogenated amorphous silicon thin films with Grignard reagent, surface hydrogen atoms have been substituted by organic groups. Wet treatment of amorphous silicon thin films in CH3(CH2)9-MgBr ether solution followed by quenching by diluted HCl changes infrared absorption spectra. After the treatment, new three peaks of C–H have been observed. In addition, the peaks did not disappeared after rising by hydrofluoric acid or various kinds of organic solvent. The spectra indicate that the Grignard reagent is enough reactive to form new covariant bonding of C and Si at the amorphous silicon surface by substitution reaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A20.4
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Okamoto, H., Nitta, Y., Adachi, T. and Hamakawa, Y., Surf. Sci., 86, 486 (1979).Google Scholar
2 Powell, M. J., IEEE Trans Electron Dev. 36 2753 (1989).10.1109/16.40933Google Scholar
3 Yamasaki, S., Kuroda, S. and Tanaka, K., Solid State Commun. 50, 9 (1984).Google Scholar
4 Spear, W. E. and LeComber, P. G., Solid State Commun. 17, 1193 (1975).Google Scholar
5 Canham, L. T.: Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
6 Kim, N. Y. and Laibinis, P. E., J. Am. Chem. Soc. 120, 4516 (1998).Google Scholar
7 Lee, E. J., Ha, J. S. and Sailor, M. J., J. Am. Chem. Soc. 117, 8295 (1995).Google Scholar
8 Linford, M. R., Fenter, P., Eisenberger, P. M. and E, C. D.. Chidsey J. Am. Chem. Soc. 117, 3145 (1995).Google Scholar
9 Ishidate, T., Inoue, K., Tsuji, K and Minomura, S., Solid State Commun. 42, 197 (1982).Google Scholar