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Study of the Radiation Damage Induced by High Energy Gamma-Ray in CdTe Detectors

Published online by Cambridge University Press:  10 February 2011

P. Chirco ,
M. Zanarini ,
E. Querzola ,
G. Zambelli ,
W. Dusi ,
E. Caroli ,
A. Cavallini ,
B. Fraboni ,
P. Siffert  and
M. Hage-Ali'
P. Chirco
Affiliation:
Department of Physics, University of Bologna, v.le Berti Pichat 6/2, 40126 Bologna, Italy
M. Zanarini
Affiliation:
Department of Physics, University of Bologna, v.le Berti Pichat 6/2, 40126 Bologna, Italy
E. Querzola
Affiliation:
Department of Physics, University of Bologna, v.le Berti Pichat 6/2, 40126 Bologna, Italy
G. Zambelli
Affiliation:
Department of Physics, University of Bologna, v.le Berti Pichat 6/2, 40126 Bologna, Italy
W. Dusi
Affiliation:
Istituto TESRE/CNR, Via Gobetti, 101, 40100 Bologna, Italy
E. Caroli
Affiliation:
Istituto TESRE/CNR, Via Gobetti, 101, 40100 Bologna, Italy
A. Cavallini
Affiliation:
INFM and Department of Physics, University of Bologna, v.le Berti Pichat 6/2,Bologna, Italy
B. Fraboni
Affiliation:
INFM and Department of Physics, University of Bologna, v.le Berti Pichat 6/2,Bologna, Italy
P. Siffert
Affiliation:
CNRS, Laboratoire PHASE, Strasbourg, France
M. Hage-Ali'
Affiliation:
CNRS, Laboratoire PHASE, Strasbourg, France
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Abstract

In recent years the performance of room-temperature semiconductor detectors such as CdTe are improved and they are now suitable candidates for several applications. However, some key parameters that can severely affect such perfomances have not been measured yet. Thus we have studied the damaging of a set of CdTe detectors irradiated in a 60Co gamma-cell in a wide range of doses and dose-rates. A full characterization of the performance of irradiated detectors has been obtained by means of spectroscopic, electrostatic, photo-induced current transient spectroscopy and photo-deep level transient spectroscopy measurements to quote the energy resolution, the leakage current, the activation energy and capture cross-section of deep level defects, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 293
Copyright
Copyright © Materials Research Society 1998

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References

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