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A Study of the Factors Which Determine the Modulation Speed of a Shallow PN Junction Porous Silicon Led

Published online by Cambridge University Press:  15 February 2011

A. J. Simons ,
T. I. Cox ,
A. Loni ,
P. D. J. Calcott ,
M. J. Uren  and
L. T. Canham
A. J. Simons
Affiliation:
Defence Research Agency, St. Andrew's Road, Great Malvern, Worcestershire, WR14 3PS, UK.
T. I. Cox
Affiliation:
Defence Research Agency, St. Andrew's Road, Great Malvern, Worcestershire, WR14 3PS, UK.
A. Loni
Affiliation:
Defence Research Agency, St. Andrew's Road, Great Malvern, Worcestershire, WR14 3PS, UK.
P. D. J. Calcott
Affiliation:
Defence Research Agency, St. Andrew's Road, Great Malvern, Worcestershire, WR14 3PS, UK.
M. J. Uren
Affiliation:
Defence Research Agency, St. Andrew's Road, Great Malvern, Worcestershire, WR14 3PS, UK.
L. T. Canham
Affiliation:
Defence Research Agency, St. Andrew's Road, Great Malvern, Worcestershire, WR14 3PS, UK.
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Abstract

The effect of the chemical thinning of the porous silicon structure on the speed and efficiency of electroluminescent devices, produced by the anodisation of a pn junction in bulk silicon is investigated. Thinning of the silicon wires results in an increase in the efficiency but at the expense of a reduction in operating speed. It is demonstrated that the operating speed is limited by the photoluminescence lifetime for small signal excitation. However, for large signals, the electroluminescence can be turned off more than 5 times faster than the photoluminescence lifetime, indicating that this need not necessarily limit device operating speed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 693
Copyright
Copyright © Materials Research Society 1997

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References

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