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Structure of Al-N Films Deposited by a Quantitative Dual Ion Beam Process

Published online by Cambridge University Press:  25 February 2011

H.T.G. Hentzell ,
J.M.E. Harper  and
J.J. Cuomo
H.T.G. Hentzell
Affiliation:
IBM Thomas J. Watson Research Ctr. P.O. Box 218, YorktownHeights, NY 10598
J.M.E. Harper
Affiliation:
IBM Thomas J. Watson Research Ctr. P.O. Box 218, YorktownHeights, NY 10598
J.J. Cuomo
Affiliation:
IBM Thomas J. Watson Research Ctr. P.O. Box 218, YorktownHeights, NY 10598
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Abstract

We describe the structure of Al-N films deposited with N/Al ratios varying from 0 to 1. A dual ion beam system supplies the Al flux by inert ion sputtering, and the N flux by low energy (100–500 eV) N2 + ion bombardment of the growing film. For N/Al < 1, a cermet structure forms with large Al grains mixed with AlN. Above the composition N/Al = 1, excess N is rejected from the AlN. The AlN films show a pronounced change in preferred orientation from c-axis perpendicular to the film surface, to c-axis parallel to the film surface with increasing N2+ energy

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 519
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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