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Structure and Composition of Luminescent Laterally Anodized Porous Si

Published online by Cambridge University Press:  15 February 2011

K. H. Jung ,
S. Shih ,
T. Y. Hsieh ,
J. C. Campbell ,
D. L. Kwong ,
T. George ,
T. L. Lin ,
H. Y. Liu ,
J. Zavada  and
S. Novak
K. H. Jung
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712.
S. Shih
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712.
T. Y. Hsieh
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712.
J. C. Campbell
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712.
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712.
T. George
Affiliation:
Center for Space Microelectronics, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109.
T. L. Lin
Affiliation:
Center for Space Microelectronics, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109.
H. Y. Liu
Affiliation:
Texas Instruments Inc., 13588 North Central Expressway, Dallas, TX 75243.
J. Zavada
Affiliation:
Army Research Office, Research Triangle Park, NC 27709.
S. Novak
Affiliation:
Evans East, 666 Plainsboro Road, Plainsboro, NJ 08536.
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Abstract

We have made structural and compositional studies of luminescent laterally anodized porous Si. Scanning electron microscopy reveals a surface with a network of cracks, while transmission electron microscopy shows a dual porous Si structure in which the upper layer is amorphous and the lower layer is either amorphous or crystalline, depending on anodization conditions. X-ray diffraction verified the presence of the amorphous layer. Secondary ion mass spectroscopy reveals very high concentrations of H, B, C, N, O, and F in the amorphous layer. Our results indirectly suggest that the amorphous layer is primarily responsible for luminescence.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 31
Copyright
Copyright © Materials Research Society 1992

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References

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