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Structural and Optical Properties of Homoepitaxial GaN Layers

Published online by Cambridge University Press:  10 February 2011

J. M. Baranowski ,
Z. Liliental-Weber ,
K. Korona ,
K. Pakuła ,
R. Stępniewski ,
A. Wysmołek ,
I. Grzegory ,
G. Nowak ,
S. Porowski  and
B. Monemar
...Show all authors
J. M. Baranowski
Affiliation:
Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, POLAND, High Pressure Research Centre Polish Academy of Sciences, Sokolowska 29/37, 01--142 Warsaw, POLAND,
Z. Liliental-Weber
Affiliation:
Centre for Advanced Materials, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA,
K. Korona
Affiliation:
Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, POLAND,
K. Pakuła
Affiliation:
Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, POLAND,
R. Stępniewski
Affiliation:
Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, POLAND,
A. Wysmołek
Affiliation:
Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, POLAND,
I. Grzegory
Affiliation:
High Pressure Research Centre Polish Academy of Sciences, Sokolowska 29/37, 01--142 Warsaw, POLAND,
G. Nowak
Affiliation:
High Pressure Research Centre Polish Academy of Sciences, Sokolowska 29/37, 01--142 Warsaw, POLAND,
S. Porowski
Affiliation:
High Pressure Research Centre Polish Academy of Sciences, Sokolowska 29/37, 01--142 Warsaw, POLAND,
B. Monemar
Affiliation:
Department of Physics and Measurements Technology, Likoping University, S-581 83 Linkoping, SWEDEN
P. Bergman
Affiliation:
Department of Physics and Measurements Technology, Likoping University, S-581 83 Linkoping, SWEDEN
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Abstract

The review of structural and optical properties of homoepitaxial layers grown by MOVCD on single crystals GaN substrates is presented. The TEM technique is used to characterise the structural properties of epi-layers. It is found that the structural properties of GaN homoepitaxial layers are determined by the polarity of the substrate surface on which the growth takes place. It is shown that threading dislocations are present only in the layers grown on the [0001] “smooth” surface. On the other hand the layers grown on the [0001] “rough” surface are free from vertical defects. The characteristic feature of the growth on the “rough” surface are pinholes. The optical properties of homoepitaxial layers are predominantly determined by the growth polarity as well. It is shown also that the reflectivity measurement is the most precise way to determine the exciton energies and that emissions due to free excitons are strongly affected by polariton effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 393
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Nakamura, S., Senoh, M., Iwasa, N. and Nagahama, S., Jpn. J. Appl. Phys. 34, L979 (1995)Google Scholar
2. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996)Google Scholar
3. Pakuła, K., Wysmołek, A., Korona, K. P., Baranowski, J. M., Stępniewski, R., Grzegory, I., Boćkowski, M., Jun, J., Krukowski, S., Wróblewski, M. and Porowski, S., Solid State Communications, 97, 919, (1996)Google Scholar
4. Baranowski, J. M. and Porowski, S., Proc. of the 23rd International Conference on Physics of Semiconductors, Berlin, ed. Scheffler, M. and Zimmermann, R., World Scientific, Singapore 1996, in pressGoogle Scholar
5. Baranowski, J. M. and Porowski, S., Proc. of the 9th Conference on Semi-Insulating nll-V Materials, Toulose (1996) in press.Google Scholar
6. Ponce, F. A., Bour, D. P., Götz, W., Johnson, N. M., Helava, H. I., Grzegory, I., Jun, J. and Porowski, S., Appl. Phys. Lett. 68, 917 (1996); F. A. Ponce, D. P. Bour, W. T. Young, M. Saunders, and J. W. Steeds, Appl. Phys. Lett. 69, 337 (1996).Google Scholar
7. Porowski, S., Jun, J., Boćkowski, M., Leszczyński, M., Krukowski, S., Wróblewski, M., Łucznik, B., and Grzegory, I., Proc. 8th Conference on Semi-Insulating III-V Materials, Warsaw, ed Godlewski, M., World Scientific, p.61 (1994).Google Scholar
8. Liliental-Weber, Z., Kisielowski, C., Ruvimov, S., Chen, Y., and Wasburn, J., Journal of Electronic Materials, 25, 1545 (1996)Google Scholar
9. Liliental-Weber, Z., et al, Mat. Res. Soc. Symp., 395, 351 (1996).Google Scholar
10. Liliental-Weber, Z., Kisielowski, C., Liu, X., Schloss, L., Washburn, J., Weber, E.R., Grzegory, I., Bockowski, M., Jun, J., Suski, T., and Porowski, S., Topical Workshop on III-V Nitrides, Nagoya, September (1995) -Solid State Electr.-in press.Google Scholar
11. Liliental-Weber, Z., Chen, Y., Ruvimov, S., and Washburn, J., Mat. Res.Soc. Symp. Proc., this Symp. - submitted (1996).Google Scholar
12. Porowski, S., Boćkowski, M., Łucznik, B., Krukowski, S., Grzegory, I., Leszczyński, M., Nowak, G., Pakula, K., Baranowski, J.M., Mat. Res. Soc. Symp. Proc., this Symp. - submitted (1996).Google Scholar
13. Klingshirn, C.F., Semiconductor Optics, Springer, p. 241 (1995).Google Scholar
14. Stępniewski, R., Wysmołek, A., Pakuła, K., Baranowski, J.M., Potemski, M., Martinez, G., Grzegory, I., Wróblewski, M. and Porowski, S., Proc. of the 23rd International Conference on Physics of Semiconductors, Berlin, ed. Scheffler, M. and Zimmermann, R., World Scientific, Singapore 1996, in pressGoogle Scholar
15. Thomas, D.C. and Hopfield, J.J., Phys. Rev., 128, 2135 (1962).Google Scholar
16. Bergman, P., Monemar, B. and Baranowski, J.M., unpublished results.Google Scholar
17. Stępniewski, R., Wysmołek, A., Korona, K., Baranowski, J.M., Pakuła, K., Potemski, M., Grzegory, I. and Porowski, S., Semiconductor Physics and Technology, submitted for publication.Google Scholar
18. Volm, D., Oettinger, K., Streibl, T., Kovalev, D., Ben-Chorin, M., Diener, J., Meyer, B.K., Majewski, J., Eckey, L., Hoffmann, A., Amano, H., and Akasaki, I., Phys.Rev. B53, 16543, (1996).Google Scholar
19. Steiner, T., Thewalt, M.L.W., Coteles, E.S. and Salerno, J.P., Phys Rev. B34, 1006 (1986).Google Scholar
20. Broser, I., Rosenzweig, M., Broser, R., Richard, M. and Birkicht, E., phys.stat.sol.(b), 90, 77, (1978)Google Scholar
21. Lagois, J., Phys.Rev. B16, 1699, (1977).Google Scholar
22. Bohnert, K., Schmieder, G., El-Dessouki, S. and Klingshim, C., Solid State Commun. 27, 295, (1978).Google Scholar
23. Pekar, S.I., J.Phys.Chem.Solids 5, 11, (1958).Google Scholar