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Structural and Electrical Properties of BaTiO3 Thin Film Capacitors

Published online by Cambridge University Press:  25 February 2011

Z.Q. Shi ,
Q.X. Jia  and
W.A. Anderson
Z.Q. Shi
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electro-Optic Materials, Depaxtment of Electrical and Computer Engineering, Bonner Hall, Amherst, NY 14260
Q.X. Jia
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electro-Optic Materials, Depaxtment of Electrical and Computer Engineering, Bonner Hall, Amherst, NY 14260
W.A. Anderson
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electro-Optic Materials, Depaxtment of Electrical and Computer Engineering, Bonner Hall, Amherst, NY 14260
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Abstract

Thin film BaTiO3 capacitors were deposited by RF magnetron sputtering. The leakage current was suppressed by more than 3 orders of magnitude if a trace of hydrogen was introduced into the sputtering chamber during film deposition. The introduction of hydrogen gas during sputtering makes the dc conductivity as low as 1×10−13 (Ω−cm)−1 for the amorphous films but still gives the dielectric constant a value of around 17. However, this accomplishment could not be achieved for polycrystal BaTiO3 thin film capacitors. As the substrate temperature increased from room temperature to 700°C, the dielectric constant was increased from 16 to 300 by using Ar + O2 gas. But, the dielectric constant was only around 30 at a deposition temperature of 700°C while the leakage current was decreased when using a gas mixture of Ar + H2 + O2 during sputtering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 291
Copyright
Copyright © Materials Research Society 1992

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