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Structural Analysis of Nanocrystals Embedded in Amorphous Si Films

Published online by Cambridge University Press:  15 February 2011

B. Garrido ,
A. Achiq ,
J. Macía ,
J. R. Morante ,
A. Pérez-Rodríguez ,
P. Ruterana  and
R. Rizk
B. Garrido
Affiliation:
EME, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Diagonal, 645–647, 08028 Barcelona, Spain, blas@irisl.fae.ub.es
A. Achiq
Affiliation:
LERMAT-ISMRA, URA-CNRS 1317, 6, Boulevard du Maréchal Juin, 14050 CEDEX, Caen, France
J. Macía
Affiliation:
EME, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Diagonal, 645–647, 08028 Barcelona, Spain, blas@irisl.fae.ub.es
J. R. Morante
Affiliation:
EME, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Diagonal, 645–647, 08028 Barcelona, Spain, blas@irisl.fae.ub.es
A. Pérez-Rodríguez
Affiliation:
EME, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Diagonal, 645–647, 08028 Barcelona, Spain, blas@irisl.fae.ub.es
P. Ruterana
Affiliation:
LERMAT-ISMRA, URA-CNRS 1317, 6, Boulevard du Maréchal Juin, 14050 CEDEX, Caen, France
R. Rizk
Affiliation:
LERMAT-ISMRA, URA-CNRS 1317, 6, Boulevard du Maréchal Juin, 14050 CEDEX, Caen, France
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Abstract

Silicon nanocrystals embedded in amorphous silicon films have been obtained by RF sputtering using two approaches : i) with a pure H2 plasma at different substrate temperatures (between 50° and 250°C) and ii) with the substrate at 250°C, from a mixture of Ar and a variable partial pressure of H2, and annealing at 750°C. In the first case (i) Raman spectra show strong phonon confinement effects and an increase in the crystalline fraction as temperature increases. In the second case (ii), a higher compressive stress is estimated and a close correlation is found between the optical band gap E0 and the hydrogen content in the basic amorphous layer a-Si:H (i.e. before annealing). These results correlate with the TEM data, which corroborate an enhancement of the crystallinity of the layers and an increase in the particle size when the substrate temperature increases. Furthermore, the crystalline fraction remains nearly constant with the H2 partial pressure. The role of hydrogen and voids in the structure of the films is presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 785
Copyright
Copyright © Materials Research Society 1997

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References

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