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Stoichiometric Disturbance in InP Measured During Ion Implantation Process

Published online by Cambridge University Press:  25 February 2011

D. Haberland ,
P. Harde ,
H. Nelkowski  and
W. Schlaak
D. Haberland
Affiliation:
Technical University Berlin, D-1000 Berlin 12, West-Germany
P. Harde
Affiliation:
Technical University Berlin, D-1000 Berlin 12, West-Germany
H. Nelkowski
Affiliation:
Technical University Berlin, D-1000 Berlin 12, West-Germany
W. Schlaak
Affiliation:
Heinrich-Hertz-Institut, D-1000 Berlin 12, West-Germany
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Abstract

To measure the sputtered ions during implantation a specially designed UHV-target chamber with a SIMS apparatus was set up. Quantitative analysis are possible with an Auger spectrometer. Disturbances in the stoichiometry in InP are measured during implantation of Sn. The enrichment of the doped surface of InP with the lighter component phoshorus will be discussed in consideration of preferential sputtering and recoil effects during implantation. Measured depth profiles of Sn in InP will be compared with calculated distributions on condition that sputtering takes place. The sputtering yield of InP bombarded by 120 keV Sn+ is 17±5.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 371
Copyright
Copyright © Materials Research Society 1984

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References

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