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Steplike Lineshape of Low Temperature Photoreflectance Spectra of InAlAs

Published online by Cambridge University Press:  15 February 2011

Y. Baltagi ,
E. Bearzi ,
C. Bru-Chevallier ,
T. Benyattou ,
G. Guillot  and
J. C. Harmand
Y. Baltagi
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - Bât 502 -69621 Villeurbanne Cedex, France., bru@insa.insa-lyon.fr
E. Bearzi
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - Bât 502 -69621 Villeurbanne Cedex, France., bru@insa.insa-lyon.fr
C. Bru-Chevallier
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - Bât 502 -69621 Villeurbanne Cedex, France., bru@insa.insa-lyon.fr
T. Benyattou
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - Bât 502 -69621 Villeurbanne Cedex, France., bru@insa.insa-lyon.fr
G. Guillot
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) - INSA de Lyon - Bât 502 -69621 Villeurbanne Cedex, France., bru@insa.insa-lyon.fr
J. C. Harmand
Affiliation:
CNET Bagneux (France Telecom), 96 av.Henri Ravera, 92220 Bagneux, France.
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Abstract

We have performed low temperature photoreflectance spectra on several MBE-InAlAs layers lattice matched to InP. Unusual lineshapes of PR spectra are observed at temperatures below 40K, characterized by a step at the InAlAs band gap energy. This step is shown to be related to a strong modification of the photo luminescence background of the photoreflectance spectra. This modification is attributed to an effect of carrier localization due to clustering effects in the InAlAs layers

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References

1. Georgakilas, A., Halkias, G., Christou, A., Kornilios, K., Papavassiliou, C., Zekentes, K., Konstandinis, G., Peiro, F., Comet, A., Ababou, S., Tabata, A., Guillot, G., J.Electrochem.Soc., 140, 1503, (1993).Google Scholar
2. Gupta, S., Bhattacharya, P.K., Pamulapati, J., Mourou, G., J.Appl.Phys., 69, 3219 (1991).Google Scholar
3. Singh, J., Bajaj, K.K., J.Appl.Phys., 57, 5433 (1985).Google Scholar
4. Monéger, S., Tabata, A., Bru, C., Guillot, G., Georgakilas, A., Zekentes, K., Halkias, G., Appl.Phys.Rev, 63, 12, 1654 (1993).Google Scholar
5. Pollak, F.H., Handbook of Semiconductors edited by Balkanski, M.: New York Academic Press, New York, pp.527–635 (1994).Google Scholar
6. Bru, C., Benyattou, T., Baltagi, Y., Monéger, S., Guillot, G., Proc. SOTAPOCS XVIII, Honolulu, May 1993, Ed. Enstrom, R.E., J. Electroch. Soc. 93–27, 214 (1993).Google Scholar
7. Salva, G.S.De, Tseng, W.F., Comas, J., J. Electroch. Soc., 139, 831 (1992).Google Scholar
8. Béarzi, E., Benyattou, T., Bru-Chevallier, C., Guillot, G., Harmand, J.C., to be published in Mat.Res.Soc., Symposium Proc. Series, 417 (1995).Google Scholar
9. Georgakilas, A., Christou, A., Lefebvre, P., Allegre, J., Zekentes, K., Halkias, G., Appl.Phys.Rev., 61, 798 (1992).Google Scholar
10. Olsthoorn, S.M., Driessen, F.A.J.M., Eijkelenboom, A.P.A.M., Giling, L.J., J. Appl. Phys., 73, 7798 (1993).Google Scholar
11. Aspnes, D.E., Surf. Science, 37, 418 (1973)Google Scholar
12. Driessen, F.A.J.M., Bauhuis, G.J., Olsthoorn, S.M., Giling, L.J., Phys.Rev.B, 48, 7889 (1993).Google Scholar
13. Shay, J.L., Phys.Rev. B, 2, 803 (1970).Google Scholar
14. Mäder, K.A., Zunger, A., Phys. Rev. B, 51, 10462 (1995)Google Scholar
15. Shanabrook, B.V., Glembocki, O.J., Beard, W.T., Phys.Rev.B, 35, 2540 (1987).Google Scholar