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Solid Phase Epitaxial Regrowth of Microcrystalline Si Films on a (100) Si Substrate

Published online by Cambridge University Press:  26 February 2011

S. Roorda ,
S. Saito  and
W. C. Sinke
S. Roorda
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407 1098 SJ Amsterdam, the Netherlands.
S. Saito
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407 1098 SJ Amsterdam, the Netherlands.
W. C. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407 1098 SJ Amsterdam, the Netherlands.
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Abstract

Microcrystalline Si, as produced by explosive crystallization of an amorphous Si layer on (100) Si, shows a two-stage annealing behaviour. Initially, solid phase epitaxial regrowth occurs very rapidly at temperatures at, or above 800°C. After a few seconds, the regrowth rate slows down to the value typical for alignment of poly-Si. Solid phase epitaxial regrowth of microcrystalline Si is suggested to be strongly dependent on grain size and structure.

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References

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