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SiC Power Devices

Published online by Cambridge University Press:  15 February 2011

T. P. Chow  and
M. Ghezzo
T. P. Chow
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180-3590, chow@unix.cie.rpi.edu
M. Ghezzo
Affiliation:
General Electric Corporate Research and Development, Schenectady, NY 12301, ghezzo@crdgw2.crd.ge.com
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Abstract

The present status of SiC high-voltage power switching devices is reviewed. The figures of merits that have been used for unipolar and bipolar devices to quantify the intrinsic performance improvement over silicon are presented. Analytical and numerical modeling and simulations to estimate the BV and device choice are described. The active area and termination design of trenched-gate MOS power transistors, together with an integrated process for their fabrication, is presented. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for SiC device commercialization are discussed. Finally, the impact of SiC power devices on motor drive systems is estimated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 9
Copyright
Copyright © Materials Research Society 1996

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