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SiC Crystal Growth from the Vapor and Liquid Phase

Published online by Cambridge University Press:  21 March 2011

Dieter Hofmann ,
Matthias Bickermann ,
Dirk Ebling ,
Boris Epelbaum ,
Lev Kadinski ,
Markus Selder ,
Thomas Straubinger ,
Roland Weingaertner ,
Peter Wellmann  and
Albrecht Winnacker
Dieter Hofmann
Affiliation:
Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, D-91058 Erlangen, Germany
Matthias Bickermann
Affiliation:
Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, D-91058 Erlangen, Germany
Dirk Ebling
Affiliation:
Freiburg Materials Research Center (FMF), University of Freiburg, Stefan-Meier-Str. 21, D-79104 Freiburg i. Br., Germany
Boris Epelbaum
Affiliation:
Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, D-91058 Erlangen, Germany
Lev Kadinski
Affiliation:
Institute of Fluid Mechanics, University of Erlangen-Nuernberg, Cauerstr. 4, D-91058 Erlangen, Germany
Markus Selder
Affiliation:
Institute of Fluid Mechanics, University of Erlangen-Nuernberg, Cauerstr. 4, D-91058 Erlangen, Germany
Thomas Straubinger
Affiliation:
Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, D-91058 Erlangen, Germany
Roland Weingaertner
Affiliation:
Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, D-91058 Erlangen, Germany
Peter Wellmann
Affiliation:
Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, D-91058 Erlangen, Germany
Albrecht Winnacker
Affiliation:
Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, D-91058 Erlangen, Germany
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Abstract

The status of SiC vapor growth technique (PVT) is reviewed and related innovative aspects are introduced. Problems of the preparation of SiC crystals with uniform electronic properties are addressed, especially the growth of semiinsulating SiC. An overview about the performance of numerical modeling is given as tool for the optimization of the PVT process. Development activities in the field of liquid phase processing for the preparation of SiC bulk crystals and micropipe healing are presented. Finally recent results on the present understanding of filamentary void formation/elimination (micropipes, macrodefects) are summarized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H1.1
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. See e.g. Silicon Carbide and Related Materials – 1999, eds. Carter, C.H. Jr, Devaty, R.P., Rohrer, G.S., Part 2, Mater. Sci. Forum 338–342 (2000)Google Scholar
2. Augustine, A.G., Hobgood, H.McD., Balakrishna, V., Dunne, G., Hopkins, R.H., phys. stat. sol. (b) 202 137 (1997)Google Scholar
3. Glass, R.C., Henshall, D., Tsvetkov, V.F., Carter, C.H. Jr, phys. stat. sol. (b) 202 137 (1997)Google Scholar
4. Tsvetkov, V., Glass, R., Henshall, D., Asbury, D., Carter, C.H., Mater. Sci. Forum 264–268 3 (1998)Google Scholar
5. Schulze, N., Barrett, D.L., Pensl, G., Appl. Phys. Lett. 72 (13) 1632 (1998)Google Scholar
6. Hofmann, D., Bickermann, M., Eckstein, R., Koelbl, M., Mueller, St., Schmitt, E., Weber, A., Winnacker, A., J. Crystal Growth 198/199 1005 (1999)Google Scholar
7. Schmitt, E., Eckstein, R., Kölbl, M., Weber, A.D., Mat. Res. Soc. Symp. Proc. 572 271 (1999)Google Scholar
8. St.Müller, G., Glass, R.C., Hobgood, H.M., Tsvetkov, V.F., Brady, M., Henshall, D., Jenny, J.R., Malta, D., Carter, C. H. jr., J. Crystal Growth 211 325 (2000)Google Scholar
9. Neudeck, P.G., Huang, W., Dudley, M., Mat. Res. Soc. Symp. Proc. 483 285 (1998)Google Scholar
10. Straubinger, T., Bickermann, M., Hofmann, D., Wellmann, P., Weingaertner, R., Winnacker, A., Presented at the ECSRM Conference, Kloster Banz, Germany 2000, to be published in Mater. Sci. Forum (2001)Google Scholar
11. Eckstein, R., Hofmann, D., Makarov, Y., Müller, St. G., Pensl, G., Schmitt, E., Winnacker, A., Mat. Res. Soc. Symp. Proc. 423 215 (1996)Google Scholar
12. Wellmann, P., Bickermann, M., Grau, M., Hofmann, D., Straubinger, T., Winnacker, A., Mat. Res. Soc. Symp. Proc. 572 259 (1999)Google Scholar
13. Wellmann, P., Bickermann, M., Hofmann, D., Kadinski, L., Selder, M., Straubinger, T., Winnacker, A., J. Crystal Growth 216 263 (2000)Google Scholar
14. Kordina, O., Hallin, C., Ellison, A., Bakin, A.S., Ivanov, I.G., Henry, A., Yakimova, R., Tuominen, M., Vehanen, A., Janzen, E., Appl. Phys. Lett. 69 (10) 1456 (1996)Google Scholar
15. Straubinger, T., Wellmann, P., Winnacker, A., Presented at the ECSRM Conference, Kloster Banz, Germany 2000, to be published in Mater. Sci. Forum (2001)Google Scholar
16. St.Müller, G., Eckstein, R., Hartung, W., Hofmann, D., Kölbl, M., Pensl, G., Schmitt, E., Schmitt, E.J., Weber, A.D., Winnacker, A., Mater. Sci. Forum 264–268 33 (1998)Google Scholar
17. Schulz, D., Irmscher, K., Dolle, J., Eisenbeck, W., Müller, T., Rost, H.J., Siche, D., Wagner, G., Wollweber, J., Mater. Sci. Forum 338–342 87 (2000)Google Scholar
18. Bickermann, M., Hofmann, D., Straubinger, T., Weingaertner, R., Wellmann, P., Winnacker, A., Presented at the ECSRM Conference, Kloster Banz, Germany 2000, to be published in Mater. Sci. Forum (2001)Google Scholar
19. Weingärtner, R., Bickermann, M., Hofmann, D., Straubinger, T., Weingaertner, R., Wellmann, P., Winnacker, A., Presented at the ECSRM Conference, Kloster Banz, Germany 2000, to be published in Mater. Sci. Forum (2001)Google Scholar
20. Schneider, J., Niemann, E., Müller, H., Maier, K., Patent EP 9402400 / WO 9504171Google Scholar
21. Hobgood, H., Glass, R., Augustine, G., Hopkins, R., Appl. Phys. Lett. 66 1364 (1995)Google Scholar
22. Mitchel, W.C., Saxler, A., Perrin, R., Goldstein, J., Smith, S.R., Evwaraye, A.O., Solomon, J.S., Brady, M., Tsvetkov, V., Carter, C.H. Jr, Mater. Sci Forum 338–342 21 (2000)Google Scholar
23. Balakrishna, V., Augustine, A.G., Hopkins, R.H., Mat. Res. Soc. Symp. Proc. 572 245 (1999)Google Scholar
24. Hofmann, D., Heinze, M., Winnacker, A., Durst, F., Kadinski, L., Kaufmann, P., Makarov, Y., Schäfer, M., J. Cystal Growth 146 214 (1995)Google Scholar
25. Selder, M., Kadinski, L., Makarov, Yu., Durst, F., Wellmann, P., Straubinger, T., Hofmann, D., Karpov, S., Ramm, M., J. Crystal Growth 211 333 (2000)Google Scholar
26. Pons, M., Anikin, M., Chourou, K., Dedulle, J.M., Madar, R., Blanquet, E., Pisch, A., Bernard, C., Grosse, P., Faure, C., Basset, G., Grange, Y., Mater. Sci. Eng. B61–62 18 (1999)Google Scholar
27. Karpov, S.Yu., Kulik, A.V., Zhmakin, I.A., Makarov, Yu.N., Mokhov, E.N., Ramm, M.G., Ramm, M.S., Roenkov, A.D., Vodakov, Yu.A., J. Crystal Growth 211 347 (2000)Google Scholar
28. Ma, R.H., Chen, Q.S., Zhang, H., Prasad, V., Balkas, C.M., Yushin, N.K., J. Crystal Growth 211 352 (2000)Google Scholar
29. Selder, M., Kadinski, L., Durst, F., Straubinger, T., Hofmann, D., Mater. Sci. Eng. B61–62 93 (1999)Google Scholar
30. Nilson, O., Mehling, H., Horn, R., Fricke, J., Müller, St., Eckstein, R., Hofmann, D., High Temperature, High Presure 29 73 (1997)Google Scholar
31. St.Müller, G., Fricke, J., Hofmann, D., Horn, R., Nilsson, O., Rexer, B., Mater. Sci. Forum 338–342 43 (2000)Google Scholar
32. Kitanin, E.L., Ramm, M.S., Ris, V.V., Schmidt, A.A., Mater. Sci. Eng. B55 174 (1998)Google Scholar
33. Jordan, A.S., Caruso, R., von Neida, A.R., The Bell System Technical Journal 59 (4) 593 (1980)Google Scholar
34. Samant, A.V., Pirouz, P., Int. J. Ref. Metals and Hard Materials 16 277 (1998)Google Scholar
35. Alexander, H., Haasen, P., Solid State Physics 21 (1968)Google Scholar
36. Hofmann, D., Mueller, M., Mater. Sci. Eng. B61–62 29 (1999)Google Scholar
37. Yakimova, R., Tuominen, M., Bakin, A.S., Fornell, J.O., Vehanen, A., Janzen, E., Inst. Phys. Conf. Ser. 142 101 (1996)Google Scholar
38. Rendakova, S., Ivantsov, V., Dimitriev, V., Mater. Sci. Forum 264–268 163 (1998)Google Scholar
39. Epelbaum, B., Hofmann, D., Müller, M., Winnacker, A., Mater. Sci. Forum 338–342 107 (2000)Google Scholar
40. Frank, F.C., Acta Cryst. 4 497 (1951)Google Scholar
41. Cabrera, N., Levine, M.M., Phil. Mag. 1 450 (1956)Google Scholar
42. van der Hoek, B., van der Eerden, J.P., Bennema, P., J. Cryst. Growth 56 621 (1982)Google Scholar
43. Huang, X.A., Dudley, M., Vetter, W.M., Huang, W., Wang, S., Carter, C.H. Jr, Appl. Phys. Lett. 74 (3) 353 (1999)Google Scholar
44. Heindl, J., Dorsch, W., Eckstein, R., Hofmann, D., Marek, T., Müller, St. G., Strunk, H.P., Winnacker, A., J. Cryst. Growth 179 510 (1997)Google Scholar
45. Heindl, J., Dorsch, W., Strunk, H.P., Müller, St. G., Eckstein, R., Hofmann, D., Winnacker, A., Phys. Rev. Lett. 80 740 (1998)Google Scholar
46. Hofmann, D., Bickermann, M., Hartung, W., Winnacker, A., Mat. Sci. Forum 338–342 445 (2000)Google Scholar
47. Dudley, M., Huang, X.R., Huang, W., Powell, A., Wang, S., Neudeck, P., Skowronski, M., Appl. Phys. Lett. 75 6 (1999) 784Google Scholar
48. Chernov, A.A., Contem. Physics. 30 (1989) 251 Google Scholar
49. Kuhr, T.A., Skowronski, M., Vetter, W.M., Dudley, M., Presented at the ECSRM Conference, Kloster Banz, Germany 2000, to be published in Mater. Sci. Forum (2001)Google Scholar
50. Pirouz, P., Mat. Res. Soc. Symp. Proc. 512 113 (1998)Google Scholar
51. Heindl, J., Doctoral Thesis, University of Erlangen-Nuernberg: “Aspekte der SiCTechnologie: Micropipes und Implantationsdefekte“, in Series “Mikrostrukturelle Materialforschung“(ed. Strunk, H. P.) 9 (1999)Google Scholar
52. Epelbaum, B., Hecht, U., Hofmann, D., Winnacker, A., Presented at the ECSRM Conference, Kloster Banz, Germany 2000, to be published in Mater. Sci. Forum (2001)Google Scholar
53. Epelbaum, B., Hofmann, D., J, Crystal Growth (2001) in pressGoogle Scholar
54. Burton, W.K., Cabrera, N., Frank, F.C., Trans. Roy. Soc. 243 299 (1951)Google Scholar
55. Sunagawa, I., Bennema, P., J. Cryst. Growth 53 490 (1981)Google Scholar
56. van der Hoek, B., van der Eerden, J.P., Bennema, P., Sunagawa, I., J. Cryst. Growth 56 621 (1982)Google Scholar