Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-02-05T14:39:08.800Z Has data issue: false hasContentIssue false
  • English
  • Français

A Self-Interstitial Related Model for the Formation of Thermal Donors in Silicon

Published online by Cambridge University Press:  26 February 2011

D. Mathiot
D. Mathiot*
Affiliation:
CNET-CNS - BP : 98 - Chemin du Vieux Chêne - 38243 Meylan Cedex - France.
Get access

Abstract

A new kinetic model is presented for the formation of thermal donors in silicon. This model is based on the aggregation of the self-interstitials generated by oxygen precipitation, on preexisting oxygen related nuclei.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 189
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Fuller, C.S., Dietzenberger, J.W., Hannay, N.B. and Buehler, E., Phys. Rev. 96, 833 (1954).Google Scholar
2.Pajot, B., Compain, H., Lerouille, L. and Clerjaud, B., Physica 117B and II8B, 110 (1983).Google Scholar
3.Ourmazd, A., Schróter, W. and Bourret, A., J. Appl. Phys. 56, 1670 (1984).Google Scholar
4.Borenstein, J.T., Peak, D. and Corbett, J.W., J. Mater. Res. 1, 527 (1986).Google Scholar
5.Newman, R.C., J. Phys. C 18, L967 (1985).Google Scholar
6.Newman, R.C., in “Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon”, Mikkelsen, J.C. Jr, Pearton, S.J., Corbett, J.W. and Pennicook, S.J. Eds (Mater. Res. Soc., Proc. 59, Pittsburgh, 1986), p. 205.Google Scholar
7.Mathiot, D., Appl. Phys. Lett. 51, 904 (1987).Google Scholar
8.Stavola, M., Patel, J.R., Kimerling, L.C. and Freeland, P.E., Appl. Phys. Lett. 42, 73 (1983).Google Scholar
9.Suesawa, M. and Sumino, K., Phys. Stat. Sol. (a) 82, 235 (1984).Google Scholar
10.DeLeo, G.G., Milsted, C.S. Jr and Kralik, J.C., Phys. Rev. B 31, 3588 (1985).Google Scholar
11.Cazcarra, V. and Zunino, P., J. Appl. Phys. 51, 4206 (1980).Google Scholar
12.Hahn, S. in “Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon”, Mikkelsen, J.C. Jr, Pearton, S.J., Corbett, J.W. and Pennicook, S.J. Eds (Mater. Res. Soc. Proc. 59, Pittsburgh, 1986), p. 181.Google Scholar
13.Mathiot, D., in “Semiconductor Silicon 1986”, Huff, H.R., Abe, T. and Kolbesen, B. Eds (The Electrochem. Soc., Pennington, 1986) p. 556.Google Scholar