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Self-Heating Effects in High-Power AlGaN/GaN HFETs

Published online by Cambridge University Press:  21 March 2011

M. Kuball ,
M.J. Uren ,
J.M. Hayes ,
T. Martin ,
J.C.H. Birbeck ,
R.S. Balmer  and
B.T. Hughes
M. Kuball
Affiliation:
University of Bristol, H.H. Wills Physics Laboratory, Bristol BS8 1TL, United Kingdom
M.J. Uren
Affiliation:
QinetiQ Ltd., St. Andrew's Road, Malvern, Worcs WR14 3PS, United Kingdom
J.M. Hayes
Affiliation:
University of Bristol, H.H. Wills Physics Laboratory, Bristol BS8 1TL, United Kingdom
T. Martin
Affiliation:
QinetiQ Ltd., St. Andrew's Road, Malvern, Worcs WR14 3PS, United Kingdom
J.C.H. Birbeck
Affiliation:
QinetiQ Ltd., St. Andrew's Road, Malvern, Worcs WR14 3PS, United Kingdom
R.S. Balmer
Affiliation:
QinetiQ Ltd., St. Andrew's Road, Malvern, Worcs WR14 3PS, United Kingdom
B.T. Hughes
Affiliation:
QinetiQ Ltd., St. Andrew's Road, Malvern, Worcs WR14 3PS, United Kingdom
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Abstract

We report on the non-invasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN heterostructure field effect transistors (HFETs). Micro-Raman spectroscopy was used to produce temperature maps with ≈1 μm spatial resolution and a temperature accuracy of better than 10°C. Significant self-heating effects in the source-drain opening of AlGaN/GaN HFETs were measured. Devices grown on sapphire and SiC substrates were compared. Three-dimensional finite-difference heat dissipation calculations were performed as function of device geometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I12.4.1
Copyright
Copyright © Materials Research Society 2002

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References

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