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Schottky Contacts on Annealed GaAs

Published online by Cambridge University Press:  15 February 2011

R. E. Miles ,
P. J. Tasker ,
D. V. Morgan  and
M. J. Howes
R. E. Miles
Affiliation:
Department of Electrical and Electronic Engineering, University of Leeds, Leeds LS2 9JT, (Gt. Britain)
P. J. Tasker
Affiliation:
Department of Electrical and Electronic Engineering, University of Leeds, Leeds LS2 9JT, (Gt. Britain)
D. V. Morgan
Affiliation:
Department of Electrical and Electronic Engineering, University of Leeds, Leeds LS2 9JT, (Gt. Britain)
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Abstract

Unimplanted n-type GaAs epitaxial layers have been annealed under the same conditions as those required to activate ion implants. If the duration of the anneal is sufficiently long (e.g. 10 min at 800°C) acceptor ions accumulate at the surface with a concentration of about 2×1022 m−3. Schottky contacts to annealed samples always show increased current densities up to six orders of magnitude greater than those in unannealed layers. This has the effect of lowering the Q values of varactor diodes made out of this material, up to frequencies of 1 GHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 319
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1 Ezis, A., Morgan, D. V. and Howes, M. J., Ion implanted cathode doping notches in GaAs, Nucl. Instrum. Methods, 182–183 (1981) 705–708.Google Scholar
2 Taylor, P. D. and Morgan, D. V., Thermal emission from damage near the interface of Schottky barriers and its influence on thermally stimulated and transient current experiments, J. Phys. D, 10 (1977) 73–82.Google Scholar
3 Makram-Ebeid, S., Gautard, D., Devillard, P. and Martin, G. M., Outdiffusion of the main electron trap in bulk GaAs due to thermal treatment, Appl. Phys. Lett., 40 (1982) 161–163.CrossRefGoogle Scholar
4 McMahon, R. A. and Ahmed, H., Electron beam annealing of ion-implanted silicon, Electron. Lett., 15 (1979) 45–46.Google Scholar
5 Hurle, D. T. J., Revised calculation of point defect equilibria and non–stoichiometry in gallium arsenide, J. Phys. Chem. Solids, 40 (1979) 627–637.Google Scholar
6 Sze, S. M., Physics of Semiconductor Devices, Wiley, New York, 2nd edn., 1981.Google Scholar
7 Klein, P. B., Nordquist, P. E. R. and Siebermann, P. G., Thermal conversion of GaAs, J. Appl. Phys., 51 (1980) 4861–4869.Google Scholar
8 Clegg, J. B., Quantitative measurement of impurities in GaAs layers by secondary ion mass spectrometry, Surf. Interface Anal., 2 (1980) 91–95.Google Scholar
9 Taylor, P. D. and Morgan, D. V., The effects of radiation damage on the properties of Ni–n–GaAs Schottky diodes, Solid-State Electron., 19 (1976) 481–488.Google Scholar
10 Chiang, S. Y. and Pearson, G. L., Properties of vacancy defects in GaAs single crystals, J. Appl. Phys., 146 (1975) 2986–2991.CrossRefGoogle Scholar