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Scanning Tunneling Microscopy Observation Of Single Dangling Bonds on the Si(100)2×1:H Surface

Published online by Cambridge University Press:  15 March 2011

Lequn Liu ,
Jixin Yu  and
Joseph W. Lyding
Lequn Liu
Affiliation:
Beckman Institute, University of Illinois, Urbana, IL 61801. Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801
Jixin Yu
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801
Joseph W. Lyding
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801
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Abstract

The electrical properties of single dangling bonds on the Si(100)2×1:H surface are investigated by ultra high vacuum scanning tunneling microscopy. On the N-type Si(100)2×1:H surface, single dangling bonds created by feedback controlled lithography and natural dangling bonds have a fixed negative charge. On the other hand, they are observed as neutral on the P-type Si(100)2×1:H surface. Current image tunneling spectroscopy is used to characterize both types of dangling bonds. The dangling bonds with fixed negative charge display a dramatic voltage dependence with Friedel oscillations observed in the empty state images. The neutral dangling bonds appear as protrusions in both the empty and filled state images.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 705: Symposium Y – Nanopatterning–From Ultralarge-Scale Integration to Biotechnology , 2001 , Y6.6
Copyright
Copyright © Materials Research Society 2002

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