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RTP-CVD of Si Materials and Devices for ULSI Applications

Published online by Cambridge University Press:  22 February 2011

D. L. Kwong ,
T. Y. Hsieh  and
K. H. Jung
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
T. Y. Hsieh
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
K. H. Jung
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
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Abstract

Rapid thermal processing chemical vapor deposition (RTP-CVD) has received considerable attention because of its ability to reduce many of the processing problems associated with thermal exposure in conventional chemical vapor deposition, while still retaining the ability to grow high quality epitaxial layers. In this paper, the principles of the RTP-CVD system are described, followed by results of experiments on in-situ cleaning, undoped Si epitaxy and in-situ doped Si epitaxy, and selective Si deposition using oxide masks. Our results show that RTP-CVD is capable of growing high quality, epitaxial layers with sharp, dopant transition profiles. Selective deposition was achieved without the use of HC1. We also studied the growth and characterization of GexSi1−x films for optical waveguiding.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 557
Copyright
Copyright © Materials Research Society 1991

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References

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