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The Role of the Band GAP in the Light-Induced Degradation of Amorphous Silicon Alloys

Published online by Cambridge University Press:  16 February 2011

Thomas Unold
Thomas Unold*
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
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Abstract

The dependence of the light-induced degradation on the band gap and hydrogen content in Amorphous silicon and related alloys is discussed. A simple model is presented which predicts that the light-induced degradation should be strongly correlated with the optical gap. In particular, for materials with E gap smaller than approximately 1.2eV no degradation is expected. The implications and consequences of the model for the task of reducing metastability in Amorphous silicon alloys are discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 287
Copyright
Copyright © Materials Research Society 1994

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References

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