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Role of in-Situ Rapid Isothermal Processing (Rip) in the Metallization and Passivation of Indium Phosphide Devices

Published online by Cambridge University Press:  25 February 2011

R. Singh ,
R. P. S. Thakur ,
A. Katz  and
A. J. Nelson
R. Singh
Affiliation:
University of Oklahoma, School of Electrical Engineering and Computer Science, Norman, Oklahoma 73019
R. P. S. Thakur
Affiliation:
University of Oklahoma, School of Electrical Engineering and Computer Science, Norman, Oklahoma 73019
A. Katz
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. J. Nelson
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
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Abstract

As compared to a stand alone rapid isothermal annealing unit, the integration of deposition system and rapid isothermal processing unit is very attractive for the next generation of micro, opto and cryoelectronics. We have used in-situ rapid isothermal processor for in-situ rapid isothermal chemical cleaning of InP, solid phase epitaxial growth of II-A fluorides, and in-situ metallization of InP capacitors. As compared to ex-situ annealed films, SrF2 films deposited on InP by in-situ rapid isothermal processed films show less thermal stress and lower thermal hysteresis for the identical thermal budget. Similarly, as compared to ex-situ annealing, in-situ cleaning of InP before metallization followed by in-situ annealing results into improved high frequency capacitance-voltage (C-V) characteristics of Al-SrF2-InP capacitors.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 423
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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