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The Resolution of Photoelectrochemically Etched Features

Published online by Cambridge University Press:  21 February 2011

J. Cheng  and
P. A. Kohl
J. Cheng
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974
P. A. Kohl
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The profiles of features etched photoelectrochemically in n-InP are studied to determine the factors which govern their distortions and to determine the factor limiting spatial resolution for etch depths in the 100–200−μm range. The optimal conditions for etching straight grooves using laser light are determined. The application to front-to-back mask registration will be discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 127
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Ostermayer, F. W. Jr., Kohl, P. A., Burton, R. H.; Appl. Phys. Letters 43, 642 (1983).Google Scholar
2. Kohl, P. A., D'Asaro, L. A., Wolowodiuk, C., Ostermayer, F. W. Jr., to be published in Electron Device Letters, Jan. 1984.Google Scholar
3. Bowers, J. E., Coldren, L. A., Miller, B. I., Kohl, P. A., presented at the Electronic Materials Conference, Univ. of Vermont, Burlington, Vt., June 24, 1983.Google Scholar