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Residual Stress Effects in Ferroelectric Thin Films

Published online by Cambridge University Press:  01 February 2011

T. A. Berfield ,
N. R. Sottos ,
R. J. Ong  and
D. A. Payne
T. A. Berfield
Affiliation:
Department of Theoretical and Applied Mechanics, Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
N. R. Sottos
Affiliation:
Department of Theoretical and Applied Mechanics, Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
R. J. Ong
Affiliation:
Department of Materials Science and Engineering and Frederick Seitz Materials Research, Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
D. A. Payne
Affiliation:
Department of Materials Science and Engineering and Frederick Seitz Materials Research, Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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Abstract

Recent developments in soft lithographic patterning enable the integration of functional ceramic thin films on a chip, rather than by adding discrete components to the system. As integrated device applications push the characteristic length scale of materials smaller and smaller, surface and interface effects play an important role, producing significant scientific challenges to the characterization of mechanical properties, performance and reliability. In this paper, we investigate the complex roles of microstructure, interface effects and residual stresses on ferroelectric thin film performance. Pb(Zr0.53Ti0.47)O3 films ranging in thickness from 190 nm to 500 nm were deposited by a sequential build up of sol-gel derived thin layers onto platinized Si substrates. Residual stresses in the films after thermal processing were observed and calculated from laser reflectance measurements of wafer curvature. Field-induced displacements were then measured by interferometric methods for films with well-characterized residual stress states. Results indicate significant increases in film performance with a decrease in measured residual tensile stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C3.2
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1 Li, J.F.., Viehland, D.D., Tani, T., Lakeman, C.D.E., and Payne, D.A.. J. Appl. Phys., 75, 4424 (1994).Google Scholar
2 Trolier-McKinstry, S., et al., MRS Symposium- Proceedings, 433, Ferroelectric Thin Films 363 (1996).Google Scholar
3 Wang, P., et al., Piezoelectrics and Acoustooptics 20, 54 (1998).Google Scholar
4 Ichiki, M., Akedo, J., Schroth, A., Maeda, R. and Ishikawa, Y.: Jpn. J. Appl. Phys. 36 (1997).Google Scholar
5 Surowiak, Z., Zajosz, H., and Dytry, R., Thin Solid Films 51, 359 (1978).Google Scholar
6 Budd, K.D., Dey, S.K., and Payne, D.A., Br. Ceram. Proc. 36, 107 (1985).Google Scholar
7 Shepard, J.F. Jr, et al. Proceedings of the 10th IEE Int. Symposium on Applications of Ferroelectrics, New York, 161 (1996).Google Scholar
8 Spierings, G.A.C.M., Dormans, G.J.M., Moors, W.G.J., and Ulenaers, M.J.E., J. Appl. Phys. 78, 1926 (1995).Google Scholar
9 Lian, L., and Sottos, N.R., J. Appl. Phys. 95, 629 (2004).Google Scholar
10 Lakeman, C. D. E. and Payne, D. A., J. Am. Ceram. Soc. 75, 3091 (1992).Google Scholar
11 Tani, T. and Payne, D. A., J. Am. Ceram. Soc. 77, 1242 (1994).Google Scholar
12 Stoney, G. G., Proc. R. Soc. London A 82, 172 (1909).Google Scholar
13 Lian, L. and Sottos, N.R., J. Appl. Phys. 87, 3941 (2000).Google Scholar
14 Maiwa, H., and Ichinose, N., Jpn. J. Appl. Phys, 42, 4392 (2003).Google Scholar
15 Hong, J., and Song, H.W., J. Appl. Phys, 92, 7434 (2002).Google Scholar
16 Tuttle, B.A., et al., Proceedings of the 8th IEEE Int. Symposium on Applications of Ferroelectrics, New York, 344 (1992).Google Scholar
17 Teowee, G., et al., MRS Symposium- Proceedings, 493, Ferroelectric Thin Films 439 (1998).Google Scholar
18 Damjanovic, D., Taylor, D.V., Setter, N., MRS Symposium-Proceedings, 595 Ferroelectric Thin Films 529 (2000).Google Scholar