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Residual Strain and Defect Analysis in as Grown and Annealed SiGe Layers

Published online by Cambridge University Press:  22 February 2011

A. R. Powell ,
R. A. Kubiak ,
T. E. Whall ,
E. H. C. Parker  and
D. K. Bowen
A. R. Powell
Affiliation:
Department of Physics, Warwick University, Coventry, CV4 7AL, England
R. A. Kubiak
Affiliation:
Department of Physics, Warwick University, Coventry, CV4 7AL, England
T. E. Whall
Affiliation:
Department of Physics, Warwick University, Coventry, CV4 7AL, England
E. H. C. Parker
Affiliation:
Department of Physics, Warwick University, Coventry, CV4 7AL, England
D. K. Bowen
Affiliation:
Department of Engineering, Warwick University, Coventry, CV4 7AL, England
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Abstract

In this paper we address the problem of producing SiGe buffer layers of acceptable quality for the growth of symmetrically strained SiGe structures. Initially we consider SiGe layers grown to well beyond the metastable critical thickness and examine the degree of residual strain both as - grown and post anneal. The defect levels in metastable SiGe layers following high temperature anneal were also studied. A buffer layer was grown consisting of stacked metastable SiGe layers each of which is annealed in situ prior to the growth of the next layer and terminating with a 0.45 SiGe alloy. This produces nearly fully relaxed 1.15pim thick structures with threading dislocation densities of 4 × 106cm−2. Limited area growth on Si suggests that elastically relaxed material free of both threading and misfit dislocations can be produced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 277
Copyright
Copyright © Materials Research Society 1991

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