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Residual Defects after Pulsed Laser Annealing of Ion implanted Silicon

Published online by Cambridge University Press:  15 February 2011

A. Mesli ,
J.C. Muller ,
D. Salles  and
P. Siffert
A. Mesli
Affiliation:
Centre de Recherches NucléairesGroupe de Physique et Applications des Semiconducteurs (PHASE) 67037 STRASBOURG-Cedex, FRANCE
J.C. Muller
Affiliation:
Centre de Recherches NucléairesGroupe de Physique et Applications des Semiconducteurs (PHASE) 67037 STRASBOURG-Cedex, FRANCE
D. Salles
Affiliation:
Centre de Recherches NucléairesGroupe de Physique et Applications des Semiconducteurs (PHASE) 67037 STRASBOURG-Cedex, FRANCE
P. Siffert
Affiliation:
Centre de Recherches NucléairesGroupe de Physique et Applications des Semiconducteurs (PHASE) 67037 STRASBOURG-Cedex, FRANCE
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Abstract

Capacitance transient spectroscopy has been used to investigate the electrically active defects subsisting, after a ruby laser pulse annealing, in ion implanted silicon. In contrast to the common view, it is shown that the identified point defects are related to residual implantation related defects buried beyond the dopant distribution and not to the laser effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 451
Copyright
Copyright © Materials Research Society 1981

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References

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