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Relation of the Electroluminescence Measurements to A-Si.H Solar Cell Parameters

Published online by Cambridge University Press:  15 February 2011

Keda Wang  and
Daxing Han
Keda Wang
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255, USA
Daxing Han
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255, USA
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Abstract

We have measured the intensity of electroluminescence (EL) and its energy spectrum in a-Si:H solar cells having an initial energy conversion efficiency from 5.75 to 9.8 %, and open-circuit voltages (Voc) between 0.799 and 0.952 V. We found that (a) at room temperature, EL efficiency is proportional to the initial solar cell energy conversion efficiency; (b) the defect energy distribution in the i-layer can be detected by EL energy spectrum at room temperature; and (c) Voc is simply related to the quasi-Fermi level splitting obtainable in the i-layer and that the buffer layer serves to increase this splitting.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 633
Copyright
Copyright © Materials Research Society 1995

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References

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