Hostname: page-component-54dcc4c588-scsgl Total loading time: 0 Render date: 2025-09-11T11:51:22.515Z Has data issue: false hasContentIssue false
  • English
  • Français

Reduced Amorphization of Ion-Milled Silicon Cross-Section Transmission Electron Microscope Samples by Dynamic Annealing During Milling.

Published online by Cambridge University Press:  21 February 2011

D. Bahnck  and
R. Hull
D. Bahnck
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R. Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
Get access

Abstract

We have developed an experimental apparatus for heating samples in the temperature range 50–400°C during ion milling. We find that heating to temperatures > 250°C during milling greatly reduces ion sputtering amorphization of the sample surfaces, due to dynamic reannealing of point defects. This allows thinner regions of crystalline sample to be imaged, without the signal being swamped by noise due to milling amorphization. At temperatures ≥300°C, however implantation defects am formed. We discuss the advantages of this technique for high resolution imaging.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. See, for example, Dearnaley, G., Nelson, R.S., Freeman, J.H. and Stephens, J., Ion Implantation in Semiconductors (North Holland, London, 1973)Google Scholar
2. Gibson, J.M. and McDonald, M.L., Proc. Mat. Res. Soc. 82,109 (1987)CrossRefGoogle Scholar
3. Bahnck, D. and Hull, R., MRS Proc 199,253 (1990)Google Scholar
4. Bahnck, D., Batstone, J.L. and Phillips, Julia M., MRS Proc. 115,63 (1988)CrossRefGoogle Scholar
5. Cherns, D., Anstis, G.R., Hutchison, J.L. and Spence, J.C.H., Phil. Mag. A 46, 849 (1982)Google Scholar
6. Parker, M.A., Ph. D. Thesis, Stanford University, 1988 Google Scholar