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Redistribution of Ion Implanted Hydrogen in Polycrystalline Silicon Thin Films

Published online by Cambridge University Press:  28 February 2011

Ronald N. Legge  and
James F. Brown
Ronald N. Legge
Affiliation:
Motorola Inc. Semiconductor Research and Development Physical Electronics and Packaging Laboratory 5005 East McDowell Road, Phoenix, Az. 85008
James F. Brown
Affiliation:
Motorola Inc. Semiconductor Research and Development Physical Electronics and Packaging Laboratory 5005 East McDowell Road, Phoenix, Az. 85008
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Abstract

The effect of implanted hydrogen on the resistivity of polycrystalline silicon films has been investigated. The observed reduction in resistivity due to hydrogen is most pronounced for lightly doped films, and is accentuated by a 450°C anneal. An increase in Hall mobility is also observed. The pre-implant resistivity is completely recovered by annealling at 600°C. Diffusion of hydrogen at low temperatures is monitored by local resistivity changes detected with spreading resistance measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 493
Copyright
Copyright © Materials Research Society 1986

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References

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