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Rapid Thermal Nitridation of Tungsten-Capped Shallow Ohmic Contacts to GaAs

Published online by Cambridge University Press:  25 February 2011

E. Kaminska ,
A. Piotrowska ,
E. Mizera ,
M. Guziewicz ,
A. Barcz ,
E. Dynowska  and
S. Kwiatkowski
E. Kaminska
Affiliation:
Institute of Electron Technology, 02-668 Warsaw, Poland
A. Piotrowska
Affiliation:
Institute of Electron Technology, 02-668 Warsaw, Poland
E. Mizera
Affiliation:
Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland
M. Guziewicz
Affiliation:
Institute of Electron Technology, 02-668 Warsaw, Poland
A. Barcz
Affiliation:
Institute of Electron Technology, 02-668 Warsaw, Poland
E. Dynowska
Affiliation:
Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland
S. Kwiatkowski
Affiliation:
Soltan Institute for Nuclear Studies, 00-681 Warsaw, Poland.
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Abstract

We report on the use of AuGeNi/W and AuZn/W metallizations and their further processing by rapid thermal nitridation. Nitrided tungsten serves as a cap suppressing the sublimation of As. To study the effect of annealing conditions on the properties of the W cap, comparative experiments involving conventional annealing in H2, and RTA in N2 or O2 flow, have been performed. TEM, XRD, RBS, and SIMS have been employed to investigate contact microstructures. The obtained results prove the superiority of the contacts with nitrided W cap over conventional insulating cap. No W-N phase is observed in nitrided W layers, which is consistent with the model of a "stuffed" barrier by Nicolet.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 349
Copyright
Copyright © Materials Research Society 1994

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References

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