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Rapid Thermal Annealing of GaAs/AlGaAs Coupled Double Quantum Wells

Published online by Cambridge University Press:  26 February 2011

Emil S. Koteles ,
B. Elman ,
C. A. Armiento ,
P. Melman ,
J. Y. Chi ,
R. J. Holmstrom ,
J. Powers ,
D. Owens ,
S. Charbonneau  and
M. L. W. Thewalt
Emil S. Koteles
Affiliation:
GTE Laboratories Incorporated, Waltham, MA 02254
B. Elman
Affiliation:
GTE Laboratories Incorporated, Waltham, MA 02254
C. A. Armiento
Affiliation:
GTE Laboratories Incorporated, Waltham, MA 02254
P. Melman
Affiliation:
GTE Laboratories Incorporated, Waltham, MA 02254
J. Y. Chi
Affiliation:
GTE Laboratories Incorporated, Waltham, MA 02254
R. J. Holmstrom
Affiliation:
GTE Laboratories Incorporated, Waltham, MA 02254
J. Powers
Affiliation:
GTE Laboratories Incorporated, Waltham, MA 02254
D. Owens
Affiliation:
GTE Laboratories Incorporated, Waltham, MA 02254
S. Charbonneau
Affiliation:
Simon Fraser University, Burnaby, B.C., Canada
M. L. W. Thewalt
Affiliation:
Simon Fraser University, Burnaby, B.C., Canada
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Abstract

The effect of rapid thermal annealing (RTA) on the shapes of silicon dioxide capped symmetric coupled double GaAs/AlGaAs quantum wells (CDQW) has been investigated. In contrast to previous results on single quantum wells in which increases in exciton energies were observed after RTA, large decreases in exciton energies were seen in CDQWs. Furthermore, there was clear evidence, in the excitation spectrum and in increases in the lowest energy exciton lifetime, of asymmetry present in the heterostructure after RTA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 157
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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