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Raman Study of MOMBE and Plasma-MOVPE Grown III-V Layers on Si(100).

Published online by Cambridge University Press:  28 February 2011

J. Geurts ,
J. Finders ,
H. Münder ,
M. Kamp ,
M. Oehlers ,
H. Loth ,
J. Musolf ,
J. Leiber ,
A. Brauers  and
M. Weyers
...Show all authors
J. Geurts
Affiliation:
I.Physikalisches Institut der RWTH Aachen, Sommerfeldstrasse 28, D-5100 Aachen, Federal Republic of Germany
J. Finders
Affiliation:
I.Physikalisches Institut der RWTH Aachen, Sommerfeldstrasse 28, D-5100 Aachen, Federal Republic of Germany
H. Münder
Affiliation:
Institute für Schicht und Ionentechnik (ISI), KFA Jülich, D-5170 Jülich, Federal Republic of Germany
M. Kamp
Affiliation:
Institute für Schicht und Ionentechnik (ISI), KFA Jülich, D-5170 Jülich, Federal Republic of Germany
M. Oehlers
Affiliation:
Institute für Schicht und Ionentechnik (ISI), KFA Jülich, D-5170 Jülich, Federal Republic of Germany
H. Loth
Affiliation:
Institute für Schicht und Ionentechnik (ISI), KFA Jülich, D-5170 Jülich, Federal Republic of Germany
J. Musolf
Affiliation:
Institute of Semiconductor Electronics, RWTH Aachen, Sommer-feldstrasse 24, D-5100 Aachen, Federal Republic Germany
J. Leiber
Affiliation:
Institute of Semiconductor Electronics, RWTH Aachen, Sommer-feldstrasse 24, D-5100 Aachen, Federal Republic Germany
A. Brauers
Affiliation:
Institute of Semiconductor Electronics, RWTH Aachen, Sommer-feldstrasse 24, D-5100 Aachen, Federal Republic Germany
M. Weyers
Affiliation:
Institute of Semiconductor Electronics, RWTH Aachen, Sommer-feldstrasse 24, D-5100 Aachen, Federal Republic Germany
P. Balk
Affiliation:
Institute of Semiconductor Electronics, RWTH Aachen, Sommer-feldstrasse 24, D-5100 Aachen, Federal Republic Germany
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Abstract

The crystalline quality of the transition region between buffer layer and epilayer in MOMBE (metalorganic molecular beam epitaxy) and plasma-MOVPE (metalorganic vapour phase epitaxy) grown GaAs layers on Si(100) is analysed by Raman scattering with variation of the penetration depth and besides bevel polishing or step etching. The region with considerable lattice imperfections is essentially confined to the original buffer layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 499
Copyright
Copyright © Materials Research Society 1990

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References

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