Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-02-10T09:34:04.055Z Has data issue: false hasContentIssue false
  • English
  • Français

Proof of the Acceptor State of the Trigonal Iron-Boron Pair in Silicon by Electron Paramagnetic Resonance Measurements

Published online by Cambridge University Press:  03 September 2012

W. Gehlhoff  and
U. Rehse
W. Gehlhoff
Affiliation:
AG EPR im Wissenschaftler-Integrations-Programm, Rudower Chaussee 5, D/O-l 199 Berlin
U. Rehse
Affiliation:
AG EPR im Wissenschaftler-Integrations-Programm, Rudower Chaussee 5, D/O-l 199 Berlin
Get access

Abstract

For the first time the acceptor state of iron-boron pairs the occurence of which are suggested by electrical measurements and theoretical considerations is directly proved by EPR measurements. The corresponding EPR spectrum is observed upon suitable illumination of samples which have been co-doped with boron and iron. It shows trigonal symmetry, and the fine-structure pattern can be described with the spin S = l, the g-values gi ∼ 2.1345±0.0001, gi = 2.1345±0.0004 and the zero-field splitting parameter |D| = (1.418±0.001) cm−1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 507
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Emanuelsson, P., Omling, P., Grimmeis, H. G., Gehlhoff, W., Kreissl, J., Irmscher, J., and Rehse, U., in Defects in Semiconductors 16, Materials Science Forum Vols. 83–87, edited by Davies, G., DeLeo, G. G., Stavola, M. (Trans. Tech. Publications, Aedermannsdorf, Switzerland, 1992), p. 137 Google Scholar
2. Ammerlaan, C. A. J., this volumeGoogle Scholar
3. Chantre, A. and Bois, D., Phys. Rev. B 21, 7979 (1985)Google Scholar
4. Chantre, A. and Kimerling, L. C., in Defects in Semiconductors, Materials Science Forum Vols. 10–12, edited by von Bardeleben, H. J. (Trans. Tech. Publications, Aedermannsdorf, Switzerland, 1986), p. 387 Google Scholar
5. Gehlhoff, W., Irmscher, K., and Rehse, U., in Defects in Semiconductors, Materials Science Forum Vols. 38–41, edited by Ferenczi, G. (Trans. Tech. Publications, Aedermannsdorf, Switzerland, 1989), p. 373 Google Scholar
6. Takahashi, H., Suezawa, M., and Sumino, K., in Defects in Semiconductors 16, Materials Science Forum Vols. 83–87, edited by Davies, G., DeLeo, G. G., Stavola, M. (Trans. Tech. Publications, Aedermannsdorf, Switzerland, 1992), p. 155 Google Scholar
7. Lemke, H., phys. stat. sol. (a) 64, 215 (1981)Google Scholar
8. Brotherton, S. D., Bradley, P., and Gill, A., J. Appl. 57, 1941 (1985)Google Scholar
9. van Kooten, J. J., Sieverts, E. G. and Ammerlaan, C. A. J., Solid State Commun. 64, 1489 (1987)Google Scholar
10. Gehlhoff, W. and Rehse, U., Solid State Phenomena 6&7, 257 (1989)Google Scholar
11. Gehlhoff, W. and Rehse, U., to be publishedGoogle Scholar
12. Gehlhoff, W. and Schmidt, J., in Hyperfine Interactions of Defects in Semiconductors, edited by Langouche, G. (Elsevier Science Publisher, Amsterdam, 1992) Chapter 5: Electron Paramagnetic ResonanceGoogle Scholar
13. Gehlhoff, W. and Segsa, K. H., phys. stat. sol. (b) J15, 443 (1983)Google Scholar
14. Watkins, G. D., Solid State Commun. 17, 1205 (1975)Google Scholar
15. Kreissl, J. and Gehlhoff, W., phys. stat. sol. (b) 112, 695 (1982)Google Scholar
16. Kreissl, J., Irmscher, K., and Gehlhoff, W., Phys. Rev. B 44, 3678 (1991)Google Scholar
17. Assali, L. V. C. and Leite, J. R., 20th ICPS, Anastassakis, E. M. and Joannopoulos, J. D., Eds. (World Scientific, Singapore, 1990), Vol. 1, p. 597 Google Scholar