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Process Development and Integration of Piezoelectric Aluminum Nitride Thin-Film for RF MEMS Applications

Published online by Cambridge University Press:  11 February 2011

Rajnish K. Sharma ,
Jiang Ning ,
Feng Hanhua  and
R. Gopalakrishnan
Rajnish K. Sharma
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore-117685, e-mail: sharma@ime.a-star.edu.sg; Fax: 65–6777–0670
Jiang Ning
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore-117685, e-mail: sharma@ime.a-star.edu.sg; Fax: 65–6777–0670
Feng Hanhua
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore-117685, e-mail: sharma@ime.a-star.edu.sg; Fax: 65–6777–0670
R. Gopalakrishnan
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore-117685, e-mail: sharma@ime.a-star.edu.sg; Fax: 65–6777–0670
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Abstract

The aluminum nitride (AlN) process was successfully developed for as high frequency thin-film for bulk acoustic resonator applications. Columnar AlN was deposited on p-type (100) silicon substrate at 300–500°C using pulse direct current (DC) sputtering technique. Argon to nitrogen ratio was optimized to achieve stoichiometry at higher deposition rates of about 1000 Å/min at 1–4 kW DC power. The XRD of as-deposited and annealed AlN film shows preferred (002) orientations. The dry etching process was developed and etching rate about 3200 Å/min was achieved using Cl based chemistry. Film composition analysis was done using AES technique and stoichiometry was achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 741: Symposium J – Nano- and Microelectromechanical Systems (NEMS and MEMS) and Molecular Machines , 2002 , J5.43
Copyright
Copyright © Materials Research Society 2003

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References

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