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Process Design for Non-Alloyed Contacts to InP-Based Laser Devices

Published online by Cambridge University Press:  25 February 2011

A. Katz ,
W. C. Dautremont-Smith ,
S. N. G. Chu ,
S. J. Pearton ,
M. Geva ,
B. E. Weir ,
P. M. Thomas  and
L. C. Kimerling
A. Katz
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. C. Dautremont-Smith
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. N. G. Chu
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
M. Geva
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
B. E. Weir
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
P. M. Thomas
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. C. Kimerling
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Pl/Ti and W thin films on n- and p- type InP and related materials have been investigated for potential use as a refractory ohmic contacts for conventional, single-side coplanar contacted and self-aligned barrier hetcrostructurc laser devices. Pt and Ti films were deposited sequentially by electron gun evaporation, while the W layer was rf sputtered, both onto p+ -In0.53Ga0.47As (Zn doped 5×l018cm−3) and n−- InP (S doped, 5×l018cm−3). The deposition parameters of the two metal systems were optimized to produce adherent films with the lowest possible induced stress. Almost all the studied systems performed as ohmic contacts already as-deposited and were heat treated by means of rapid thermal processing in the temperature range of 300–900°C. The final contact processing conditions were tuned to provide the lowest possible contact resistance values accompanied by low mechanical stress and stable microstructure.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 401
Copyright
Copyright © Materials Research Society 1990

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References

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