Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-02-04T16:57:47.299Z Has data issue: false hasContentIssue false
  • English
  • Français

The µτ Problem: New Results on Micro-Doped a-Si:H Films

Published online by Cambridge University Press:  01 January 1993

Natalie BECK ,
Nicolas WYRSCH ,
Evelyne SAUVAIN  and
Arvind SHAH
Natalie BECK
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Rue Breguet 2, CH-2000 Neuchâtel, Switzerland
Nicolas WYRSCH
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Rue Breguet 2, CH-2000 Neuchâtel, Switzerland
Evelyne SAUVAIN
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Rue Breguet 2, CH-2000 Neuchâtel, Switzerland
Arvind SHAH
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Rue Breguet 2, CH-2000 Neuchâtel, Switzerland
Get access

Abstract

Comparative µτ-product measurements performed on a series of slightly doped (micro- doped) a-Si:H films by steady-state photocarrier grating (SSPG), steady-state photoconductivity (SSPC) and time of flight (TOF) are presented. The observed discrepancy between transient and steady-state majority carriers µτ-products is discussed within the framework of a dangling bond recombination model. Furthermore, results on the variation of µτ with doping and light-soaking are reported and ratio of capture cross-sections of charged to neutral defects are deduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 479
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Schiff, E.A., Phil. Mag. Lett. 55 (1987) 87).Google Scholar
[2] Antoniadis, H., J. of Non-Cryst. Solids 137&138 (1991) 435.Google Scholar
[3] Kočka, J., Phil. Mag.B 63 (1991) 221).Google Scholar
[4] S. Crandall, R., Semicond. and Semimetals Vol.2 IB (1984) 245.Google Scholar
[5] Hubin, J., Phil. Mag. Lett. 66 (1992) 115).Google Scholar
[6] Curtins, H., Plasma Chem. & Plasma Proc. 7 (1987) 267).Google Scholar
[7] Wyrsch, N., J. of Non-cryst. Solids 137&138 (1991) 347.Google Scholar
[8] Pipoz, P., MRS Proceedings, 258 (1992) 777.Google Scholar
[9] Ritter, D., Phys. Rev. B 38 (1988) 8296).Google Scholar
[10] Tiedje, T., Rose, A., Solid State Comm. 37 (1981) 48).Google Scholar
[11] Orenstein, H., Kastner, M.A., Phys. Rev. Lett. 46 (1981) 1421).Google Scholar
[12] Vaillant, F., Jousse, D., Phys. Rev. B 34 (1986) 4088).Google Scholar
[13] Street, R.A., Appl. Phys. Lett. 43 (1983) 672).Google Scholar
[14] Stutzmann, M., Phys. Rev. B 35 (1982) 5666).Google Scholar
[15] Shah, A., Proc. of the 5th PVSEC conf., Kyoto (1990) 821.Google Scholar
[16] Sauvain, E., submitted to J. of appl. Phys. Google Scholar