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Published online by Cambridge University Press: 03 September 2012
An optical characterization technique is proposed for GaN based compounds deposited on sapphire. In AlGaN films grown by MOCVD, the film optical behavior and the substrate to layer interface are qualified from the measured optical data. The experimental and theoretical approach used for this purpose is described in detail. The results clearly show bending effects at the interface which may be related to structural defects; a good agreement with transmission electronic microscopy analysis is obtained.