Hostname: page-component-6dbcb7884d-g628x Total loading time: 0 Render date: 2025-02-13T20:22:20.213Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of YBCO Superconducting Thin Film by Pulsed Thermal Decomposition of Ultrasonic-Misted Nitrate Solution

Published online by Cambridge University Press:  10 February 2011

Junichi. Kinugasa ,
Akimitsu. Hatta  and
Toshimichi. Ito
Junichi. Kinugasa
Affiliation:
Department of Electrical Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565, Japan, kinugasa@daiyan.pwr.eng.osaka-u.ac.jp
Akimitsu. Hatta
Affiliation:
Department of Electrical Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565, Japan, kinugasa@daiyan.pwr.eng.osaka-u.ac.jp
Toshimichi. Ito
Affiliation:
Department of Electrical Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565, Japan, kinugasa@daiyan.pwr.eng.osaka-u.ac.jp
Get access

Abstract

YBa2Cu3O7-x superconducting thin films have been prepared by a new material preparation method, namely pulsed thermal decomposition of ultrasonic-misted nitrate solution. The prepared films have been studied by using powder X-ray diffraction method, scanning electron microscopy and Rutherford backscattering spectrometry. The results obtained indicate (1) that by local heating of the substrate with an infrared lamp, c-axis oriented YBa2Cu3O7-x films can be deposited without segregation of impurity phases, (2) that a high decomposition temperature is necessary to increase flatness of thin YBa2Cu3O7-x films although a sufficient margin temperature is required to obtain impurity-phase-free films, and (3) that the efficiency of the process increases if the adhesion is large between the deposited film and the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 389
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Enomoto, Y. and Murakami, T., J. Appl. Phys. 11 807 (1986).Google Scholar
2. Quincey, P.G., Appl. Phys. Lett. 64 517 ( 1994).Google Scholar
3. Jackson, E.M., Weaver, B.D. and Summers, G.P., Appl. Phys. Lett. 64 511 (1994).Google Scholar
4. Zhang, Y.M., Winkler, D., Nilsson, P.A. and Cleason, T., Appl. Phys. Lett. 64 1153 (1994).Google Scholar
5. Gross, R., Chaudhari, P., Kawasaki, M and Gupta, A., IEEE Trans. Magn. 27 3227 (1991).Google Scholar
6. Eom, C.B., Sun, J.Z., Lairson, B.M., Streiffer, S.K., Marshall, A.F., Yamamoto, K., Anlage, S.M., Bravman, J.C., Geballe, T.H., Physica C 171 354 (1990).Google Scholar
7. Fork, D.K., Fermer, D.B., Barton, R.W., Phillips, J.M., Connell, G.A.N., Boyce, J.B., Geballe, T.H., Appl. Phys. Lett. 57 1161 (1990).Google Scholar
8. Terashima, T., Iijima, K., Yamamoto, K., Bando, Y., Mazaki, H., Jpn. J. Appl. Phys. 27 L91 (1988).Google Scholar
9. Watson, I.M., Chem. Vap. Deposition 3 9 (1997).Google Scholar