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Predictive Surface Kinetic Analysis: The Case of TiSi2 CVD

Published online by Cambridge University Press:  22 February 2011

M. A. Mendicino ,
R. P. Southwell  and
E. G. Seebauer
M. A. Mendicino
Affiliation:
Department of Chemical Engineering, University of Illinois, Urbana, IL 61801
R. P. Southwell
Affiliation:
Department of Chemical Engineering, University of Illinois, Urbana, IL 61801
E. G. Seebauer
Affiliation:
Department of Chemical Engineering, University of Illinois, Urbana, IL 61801
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Abstract

Recently, TiSi2 has been the object of considerable study because of its low resistivity among the transition metal silicides and its compatibility with existing ULSI technology [1,2]. Film growth by CVD offers the potential for selective area deposition and high production throughput. However, selective CVD of TiSi2 from gas phase SiH4 and TiCl4 is usually accompanied by a competing reaction which consumes intolerable amounts of the Si substrate [3,4]. Controlling this consumption is crucial in TiSi2 growth; however, no quantitative correlation exists between silicon consumption and growth conditions or film thickness. Additionally, the reaction mechanism for TiSi2 growth is poorly understood, and some disagreement even exists about the reaction stoichiometry [5,6]. The combined CVD/UHV approach we have developed fills many gaps in the current understanding of TiSi2 CVD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 63
Copyright
Copyright © Materials Research Society 1994

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References

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