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Plasma-Assisted Epitaxial Growth of Compound Semiconductors for Infrared Application

Published online by Cambridge University Press:  25 February 2011

K. Matsushita ,
T. Hariu ,
S. F. Fang ,
K. Shida  and
Q. Z. Gao
K. Matsushita
Affiliation:
Department of Electronic Engineering, Tohoku University, Sendai 980, Japan
T. Hariu
Affiliation:
Department of Electronic Engineering, Tohoku University, Sendai 980, Japan
S. F. Fang
Affiliation:
Department of Electronic Engineering, Tohoku University, Sendai 980, Japan
K. Shida
Affiliation:
Department of Electronic Engineering, Tohoku University, Sendai 980, Japan
Q. Z. Gao
Affiliation:
Department of Electronic Engineering, Tohoku University, Sendai 980, Japan
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Abstract

GaSb, InSb and InAs epitaxial layers with mirror surface were grown on GaSb, GaAs, InP, Si and sapphire substrates at relatively low temperatures by plasma-assisted epitaxy (PAE) in hydrogen plasma. Carrier concentrations and Hall mobilities of undoped PAE layers at room temperature are p=6×O16 cm−3; μp=750cm2/Vs, n=1×1016cm−3; μn=39,000cm2/Vs and n=7×1017 cm−3; μn=21,000cm2/Vs for GaSb on GaAs, InSb on GaAs and InAs on InP, respectively. As the first application of PAE layers to optoelectronic devices, p-GaSb/n-GaAs heterojunction photodiodes have been demonstrated to result in remarkable reduction of dark current with photoresponse in the wavelength region between 0.85 and 1.7μm for the light incident from GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 479
Copyright
Copyright © Materials Research Society 1987

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References

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