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Photoluminescence of Erbium in Amorphous Silicon: Structural Relaxation and Optical Doping

Published online by Cambridge University Press:  28 February 2011

J. S. Custer ,
E. Snoeks  and
A. Polman
J. S. Custer
Affiliation:
FOM Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, the Netherlands
E. Snoeks
Affiliation:
FOM Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, the Netherlands
A. Polman
Affiliation:
FOM Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, the Netherlands
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Abstract

Photoluminescence of erbium in ion-implanted amorphous Si has been observed after annealing at 400°C. In addition, a broad band of luminescence attributed to intrinsic defects in amorphous Si is present. The background level steadily increases with increasing anneal temperature. The fluorescence lifetimes of either the Er or the background in all samples are ≤150μsec.

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References

REFERENCES

1. Ennen, H., Schneider, J., Pomrenke, G., and Axmann, A., Appl. Phys. Lett. 43, 943 (1983);CrossRefGoogle Scholar
Ennen, H., Pomrenke, G., Axmann, A., Eisele, K., Haydl, W., and Schneider, J., Appl. Phys. Lett. 46, 381 (1985).CrossRefGoogle Scholar
2. Moutonnet, D., L'Haridon, H., Favennec, P. N., Salvi, M., Gauneau, M., Arnaud D'Avitaya, F., and Chroboczek, J., Mat. Sci. and Eng. B 4, 75 (1989).CrossRefGoogle Scholar
3. Benton, J. L., Michel, J., Kimerling, L. C., Jacobson, D. C., Xie, Y.-H., Eaglesham, D. J., Fitzgerald, E. A., and Poate, J. M., J. Appl. Phys. 70, 2667 (1991).CrossRefGoogle Scholar
4. Michel, J., Benton, J. L., Ferrante, R. F., Jacobson, D. C., Eaglesham, D. J., Fitzgerald, E. A., Xie, Y.-H., Poate, J. M., and Kimerling, L. C., J. Appl. Phys. 70, 2672 (1991).CrossRefGoogle Scholar
5. Eaglesham, D. J., Michel, J., Fitzgerald, E. A., Jacobson, D. C., Poate, J. M., Benton, J. L., Polman, A., Xie, Y.-H., and Kimerling, L. C., Appl. Phys. Lett. 58, 2797 (1991).CrossRefGoogle Scholar
6. Xie, Y.-H., Fitzgerald, E. A., and Mii, Y. J., J. Appl. Phys. 70, 3223 (1991).CrossRefGoogle Scholar
7. Widdershoven, F. P., Ph. D. Thesis, University of Twente, 1991 (unpublished).Google Scholar
8. Golanski, A., Christie, W. H., Galloway, M. D., Park, J. L., Pennycook, S. J., Poker, D. B., Moore, J. L., Harmon, H. E., and White, C. W., Nucl. Instrum. Methods B59/60, 444 (1991).CrossRefGoogle Scholar
9. Oestereich, T., Swiatkowski, C., and Broser, I., Appl. Phys. Lett. 56, 446 (1990).CrossRefGoogle Scholar
10. Polman, A., Jacobson, D. C., Eaglesham, D. J., Kistler, R. C., and Poate, J. M., J. Appl. Phys. 70, 3778 (1991).CrossRefGoogle Scholar
11. Olson, G. L. and Roth, J. A., Materials Science Reports 3, 3 (1988).CrossRefGoogle Scholar
12. Herd, S. R., Chaudhari, P., and Brodsky, M. H., J. Non-Cryst. Solids 7, 309 (1972);CrossRefGoogle Scholar
Ottaviani, G., Sigurd, D., Marrello, V., Mayer, J. W., and McCaldin, J. O., J. Appl. Phys. 45, 1730 (1974).CrossRefGoogle Scholar
13. Knapp, J. A., Picraux, S. T., Wu, C. S., and Lau, S. S., J. Appl. Phys. 58, 3747 (1985).CrossRefGoogle Scholar
14. Roorda, S., Sinke, W. C., Poate, J. M., Jacobson, D. C., Dierker, S., Dennis, B. S., Eaglesham, D. J., Spaepen, F., and Fuoss, P., Phys. Rev. B 44, 3702 (1991).CrossRefGoogle Scholar
15. Waddell, C. N., Spitzer, W. G., Fredrickson, J. E., Hubler, G. K., and Kennedy, T. A., J. Appl. Phys. 55, 4361 (1984).CrossRefGoogle Scholar
16. Sinke, W. C., Warabisako, T., Miyao, M., Tokuyama, T., Roorda, S., and Saris, F. W., J. Non-Cryst. Solids 99, 308 (1988).CrossRefGoogle Scholar
17. Roorda, S., Doom, S., Sinke, W. C., Scholte, P. M. L. O., and van Loenen, E., Phys. Rev. Lett. 62, 1880 (1989).CrossRefGoogle Scholar
18. Donovan, E. P., Spaepen, F., Poate, J. M., and Jacobson, D. C., Appl. Phys. Lett. 55, 1516 (1989).CrossRefGoogle Scholar
19. Stolk, P. A., Calcagnile, L., Roorda, S., van Linden van den Heuvell, H. B., and Saris, F. W., this symposium.Google Scholar
20. Polk, D. E., J. Non-Cryst. Solids 5, 365 (1971).CrossRefGoogle Scholar
21. Sinke, W. C., Roorda, S., and Saris, F. W., J. Mater. Res. 3, 1201 (1988).CrossRefGoogle Scholar
22. Roorda, S., Custer, J. S., Sinke, W. C., Poate, J. M., Jacobson, D. C., Polman, A., and Spaepen, F., Nucl. Instrum. Methods B59/60, 344 (1991).CrossRefGoogle Scholar
23. Street, R. A., Phys. Rev. B 21, 5775 (1980).CrossRefGoogle Scholar
24. Street, R. A., Biegelsen, D. K., and Knights, J. C., Phys. Rev. B 24, 969 (1981).CrossRefGoogle Scholar
25. Street, R. A., Biegelsen, D. K., and Weisfield, R. L., Phys. Rev. B 30, 5861 (1984).CrossRefGoogle Scholar
26. Street, R. A., Biegelsen, D. K., and Stuke, J., Philos. Mag. B 40, 451 (1979).CrossRefGoogle Scholar
27. Spry, R. J. and Compton, W. D., Phys. Rev. 175, 1010 (1968).CrossRefGoogle Scholar
28. Klein, P. B. and Pomrenke, G. S., Electron. Lett. 24, 1502 (1988).CrossRefGoogle Scholar
29. Polman, A., Jacobson, D. C., and Poate, J. M., these proceedings.Google Scholar
30. Heidemann, K. F., Grüner, M., and te Kaat, E., Radiat. Eff. 82, 103 (1984).CrossRefGoogle Scholar