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Photogenerated Carrier Confinement During the Laser-Controlled Aqueous Etching of GaAs/AlGaAs Nultilayers

Published online by Cambridge University Press:  25 February 2011

M.N. Ruberto ,
A.E. Willner ,
D.V. Podlesnik  and
R.M. Osgood Jr.
M.N. Ruberto
Affiliation:
Microelectronics Sciences Laboratories and the Center for Telecommunications Research, Columbia University, New York, NY 10027
A.E. Willner
Affiliation:
Microelectronics Sciences Laboratories and the Center for Telecommunications Research, Columbia University, New York, NY 10027
D.V. Podlesnik
Affiliation:
Microelectronics Sciences Laboratories and the Center for Telecommunications Research, Columbia University, New York, NY 10027
R.M. Osgood Jr.
Affiliation:
Microelectronics Sciences Laboratories and the Center for Telecommunications Research, Columbia University, New York, NY 10027
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Abstract

The sensitivity of the laser-controlled aqueous etching to the optical and electrical properties of semiconductors was utilized during the etching of n-GaAs/n-AlGaAs multilayers to produce novel microstructures. Since this process is controlled by the transport of photogenerated holes to the semiconductor/solution interface, we found that the morphology of etched features is dependent on the bandgap and hole diffusion length of each layer within the heterostructure.

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References

REFERENCES

[1] Podlesnik, D.V., Gilgen, H.H., Willner, A.E., and Osgood, R.M. Jr., J. Opt. Soc. Am. B 3, 775 (1986)Google Scholar
[2] Dudenkova, A.V. and Nikitin, V.V., Soviet Physics-Solid State 8, 2432–2433 (1967)Google Scholar
[3] Sze, S.M., Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 29–30 Google Scholar
[4] Hooft, G.W. 't, Opdorp, C. van, Veenvliet, H., and Vink, A.T., J. Crystal Growth 55, 173 (1981)Google Scholar
[5] Stringfellow, G.B., J. Crystal Growth 53, 45 (1981)Google Scholar
[6] Blakemore, J.S., J. Appl. Phys. 53, 10 (1982)Google Scholar
[7] Willner, A.E., Ruberto, M.N., Blumenthal, D.J., Podlesnik, D.V., and Osgood, R.M. Jr., Appl. Phys. Lett., 54, 1839 (1989)Google Scholar
[8] Ruberto, M.N., Willner, A.E., Podlesnik, D.V., and Osgood, R.M. Jr., to appear in Appl. Phys. Lett.Google Scholar