Hostname: page-component-54dcc4c588-m259h Total loading time: 0 Render date: 2025-10-02T08:57:32.767Z Has data issue: false hasContentIssue false
  • English
  • Français

Phonon Interaction in InGaAs/GaAs Quantum Dots

Published online by Cambridge University Press:  01 February 2011

Stefan Werner ,
Patrick Zimmer ,
André Strittmatter  and
Axel Hoffmann
Stefan Werner
Affiliation:
admiral50@gmx.de, Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, Berlin, 10623, Germany
Patrick Zimmer
Affiliation:
patrick.zimmer@physik.tu-berlin.de, Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, Berlin, 10623, Germany
André Strittmatter
Affiliation:
strittma@sol.physik.tu-berlin.de, Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, Berlin, 10623, Germany
Axel Hoffmann
Affiliation:
hoffmann@physik.tu-berlin.de, Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergs traße 36, Berlin, 10623, Germany
Get access

Abstract

The carrier-phonon interaction in self-organized In(Ga)As/GaAs quantum dots is investigated under resonant excitation of the ground-state transition. Different phonon-coupled processes are observed. The distinction between Raman scattering and hot-luminescence process has been resolved by time-dependent photoluminescence measurements. The quantum dot LO (33.8 meV) as well as an interface (36.5 meV) phonon mode is observed by resonant Raman scattering. For the QD LO phonon mode, a very short radiative lifetime of 10 ps was found.

Keywords

luminescenceelectrical propertiesRaman spectroscopy

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1053: Symposium EE – Phonon Engineering–Theory and Applications , 2007 , 1053-EE03-03
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Bimberg, D., Grundmann, M., and Ledentsov, N.N., Quantum Dot Heterostructures (J. Wiley & Sons, London, 1999)Google Scholar
2. Heitz, R., Born, H., Hoffmann, A., Bimberg, D., Mukhametzhanov, I., and Madhukar, A., Appl. Phys. Lett. 77, 3746 (2000)Google Scholar
3. Hameau, S., Guldner, Y., Verzelen, O., Ferreira, R., Bastard, G., Zemen, J., Lemaître, A., and Gérard, J.M., Phys. Rev. Lett. 83, 4152 (1999)Google Scholar
4. Hameau, S., Isaia, J.N., Guldner, Y., Deleporte, E., Verzelen, O., Ferreira, R., Bastard, G., Zemen, J., and Gérard, J.M., Phys. Rev. B 65, 85316 (2002)Google Scholar
5. Heitz, R., Mukhametzhanov, I., Stier, O., Madhukar, A., and Bimberg, D., Phys. Rev. Lett. 83, 4654 (1999)Google Scholar
6. Bissiri, M., Baldasarri, G. Högersthal, Höger von, Bhatti, A.S., Capizzi, M., Frova, A., Frigeri, P., Franchi, S., Phys. Rev. B 62, 4642 (2000)Google Scholar
7. Ferreira, R., Verzelen, O., and Bastard, G., Phys. Rev. Lett. 88, 146803 (2002)Google Scholar
8. Verzelen, O., Ferreira, R., and Bastard, G., Semicond. Sci. Technol. 19, S5 (2004)Google Scholar