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On the Origin of EL2 Intracenter Absorption Band in GaAs

Published online by Cambridge University Press:  26 February 2011

M. Skowronski
M. Skowronski*
Affiliation:
Cabot Corporation, Concord Road, Billerica, Massachusetts, 01821
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Abstract

An alternative interpretation of optical absorption spectra due to intracenter transition within EL2 defect in GaAs is provided. The arguments are presented that states originating from the L-valley of the conduction band can account for the presence of the wide absorption band, the no-phonon line and the observed uniaxial stress splittings. Using the analogy to the DX center, this model presents an explanation for the existence of the metastable state of EL2.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 405
Copyright
Copyright © Materials Research Society 1988

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References

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