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Observation of Near Band Edge Transition in Aluminum Nitride Thin Film Grown by MOCVD

Published online by Cambridge University Press:  10 February 2011

Xiao Tang ,
Fazla R. B. Hossain ,
Kobchat Wongchotigul  and
Michael G Spencer
Xiao Tang
Affiliation:
Materials Science Research Center of Excellence, Department of Electrical Engineering, Howard University, 2300 6th St., NW, Washington, DC 20059.
Fazla R. B. Hossain
Affiliation:
Materials Science Research Center of Excellence, Department of Electrical Engineering, Howard University, 2300 6th St., NW, Washington, DC 20059.
Kobchat Wongchotigul
Affiliation:
Materials Science Research Center of Excellence, Department of Electrical Engineering, Howard University, 2300 6th St., NW, Washington, DC 20059.
Michael G Spencer
Affiliation:
Materials Science Research Center of Excellence, Department of Electrical Engineering, Howard University, 2300 6th St., NW, Washington, DC 20059.
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Abstract

The Cathodoluminescence (CL) measurements of undoped and carbon doped aluminum nitride (AlN) thin films near the band-edge region were performed at 300, 77 and 4.2 K, respectively. These films were grown on three different substrates: 6H-SiC, 4H-SiC and sapphire. A dominant peak was observed in undoped samples around 5.9 eV. This peak can be further resolved into three distinct peaks at 6.05, 5.85, and 5.69 eV for AlN on sapphire. The temperature dependence of the peak positions and line widths were investigated. These peaks are believed to be due to exciton recombination. Also, the absorption spectra of carbon doped AlN on sapphire were analyzed to study the Urbach tail parameters which play an important role in near band-edge transitions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 119
Copyright
Copyright © Materials Research Society 1997

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References

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